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Eng Soon Tok

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Full Name
Eng Soon Tok
Variants
Tok, E.-S.
Tok, E.
TOK, E.S.T
Tok, Eng Soon
Tok Eng Soon
Soon Tok, E.
Tok E.S.
Tok, E.S.
 
Main Affiliation
 
Faculty
 
Email
phytokes@nus.edu.sg
 

Publications

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Author:  Tok, E.S.
Author:  Zhang, J.

Results 1-20 of 26 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
1Aug-2002Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]Tok, E.S. ; Neave, J.H.; Zhang, J.
2Apr-2005Determination of local lattice tilt in Si1-xGex virtual substrate using high resolution channeling contrast microscopySeng, H.L. ; Osipowicz, T. ; Zhang, J.; Tok, E.S. ; Watt, F. 
3Apr-2003Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surfacePrice, R.W.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Woods, N.J.; Zhang, J.
49-May-2013Enhanced extraction rates through gap states of molybdenum oxide anode bufferDasgupta, B.; Goh, W.P.; Ooi, Z.E.; Wong, L.M.; Jiang, C.Y.; Ren, Y.; Tok, E.S. ; Pan, J.; Zhang, J.; Chiam, S.Y.
52005Evidence for hydrogen desorption through both interdimer and intradimer paths from Si(100)-(2×1)Shi, J.; Kang, H.C. ; Tok, E.S. ; Zhang, J.
6Oct-2011Evidence for the interfacial reaction between Ni adatoms and H-Si(001) surfaceZhang, Z.; Pan, J.S.; Chai, J.W.; Zhang, J.; Tok, E.S. 
711-Nov-2002Growth dynamics of Si1-yCy and Si1-x-yGexCy on Si(001) surface from disilane, germane, and methylsilanePrice, R.W.; Tok, E.S. ; Woods, N.J.; Zhang, J.
814-Feb-2002Growth mechanisms in thin film epitaxy of Si/SiGe from hydridesZhang, J.; Woods, N.J.; Breton, G.; Price, R.W.; Hartell, A.D.; Lau, G.S.; Liu, R. ; Wee, A.T.S. ; Tok, E.S. 
9May-2002High resolution channeling contrast microscopy and channeling analysis of SiGe quantum well structuresOsipowicz, T. ; Seng, H.L. ; Wielunski, L.S.; Tok, E.S. ; Breton, G.; Zhang, J.
10Sep-2003High-resolution channeling contrast microscopy of compositionally graded Si1-XGeX layersSeng, H.L. ; Osipowicz, T. ; Sum, T.C. ; Breese, M.B.H. ; Watt, F. ; Tok, E.S. ; Zhang, J.
1114-Jul-2010Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substratesZhang, Z.; Pan, J.S. ; Zhang, J.; Tok, E.S. 
1212-Feb-2001Kinetics of Si growth from hydride precursors on As-passivated Si(001) surfaceTok, E.S. ; Hartell, A.D.; Zhang, J.
132001Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundariesTok, E.S. ; Zhang, J.; Kamiya, I.; Xie, M.H.; Neave, J.H.; Joyce, B.A.
14Nov-2003Nanostructure formation by O2 + ion sputtering of Si/SiGe heterostructuresLau, G.S.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Tjiu, W.C.; Zhang, J.
15Nov-2005Observation of local lattice tilts in strain-relaxed Si 1-xGex using high resolution channeling contrast microscopySeng, H.L. ; Osipowicz, T. ; Zhang, J.; Tok, E.S. 
16Feb-2000Optical second harmonic generation studies of epitaxial growth of Si and SiGeTok, E.S. ; Woods, N.J.; Price, R.W.; Taylor, A.G.; Zhang, J.
17May-2002Optimal geometry for GeSi/Si super-lattice structure RBS investigationWielunski, L.S.; Osipowicz, T. ; Teo, E.J. ; Watt, F. ; Tok, E.S. ; Zhang, J.
1814-Feb-2000Oscillatory optical second-harmonic generation from Si(001) surface during thin-film epitaxyTok, E.S. ; Price, R.W.; Taylor, A.G.; Zhang, J.
191999Probing the disilane adsorption kinetics: An alternative approachPrice, R.W.; Tok, E.S. ; Zhang, J.
2022-Apr-2002Probing the SiGe virtual substrate by high-resolution channeling contrast microscopySeng, H.L. ; Osipowicz, T. ; Sum, T.C. ; Tok, E.S. ; Breton, G.; Woods, N.J.; Zhang, J.