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|Title:||Enhanced extraction rates through gap states of molybdenum oxide anode buffer||Authors:||Dasgupta, B.
|Issue Date:||9-May-2013||Citation:||Dasgupta, B., Goh, W.P., Ooi, Z.E., Wong, L.M., Jiang, C.Y., Ren, Y., Tok, E.S., Pan, J., Zhang, J., Chiam, S.Y. (2013-05-09). Enhanced extraction rates through gap states of molybdenum oxide anode buffer. Journal of Physical Chemistry C 117 (18) : 9206-9211. ScholarBank@NUS Repository. https://doi.org/10.1021/jp3114013||Abstract:||Molybdenum oxide (MoO3) is a promising anode buffer layer (ABL) for high-performance organic photovoltaic (OPV) devices. However, the reasons for the enhanced performances remain unclear. In this work, we show that defect states play an important, if not dominating, role in improving the OPV performances. The changes in both the density of defect states and the work function of MoO3 with annealing are shown and correlated with the OPV device performance. The increased defect densities improve the OPV performance through an enhanced hole extraction rate at the MoO3/organic interface. The reduction in work function, however, reduces the interface field that can possibly lower mobility near the interface and reduce the electron-blocking effect. This plays a role in saturation of the device performance. This work, therefore, shows the importance of the defects in MoO3 as an ABL and a dominance of defect-enhanced extraction over a field-enhanced extraction process. © 2013 American Chemical Society.||Source Title:||Journal of Physical Chemistry C||URI:||http://scholarbank.nus.edu.sg/handle/10635/96465||ISSN:||19327447||DOI:||10.1021/jp3114013|
|Appears in Collections:||Staff Publications|
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