Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Refined By:
Date Issued:  [2000 TO 2023]

Results 161-180 of 491 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
16119-Jul-2010Improved photoinduced charge carriers separation in organic-inorganic hybrid photovoltaic devicesVaynzof, Y.; Kabra, D.; Zhao, L.; Ho, P.K.H. ; Wee, A.T.-S. ; Friend, R.H. 
1622010In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrateChen, Q.; Huang, H. ; Chen, W. ; Wee, A.T.S. ; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
163Jul-2004In situ XPS and SIMS analysis of O 2 + beam-induced silicon oxidationTan, S.K.; Yeo, K.L.; Wee, A.T.S. 
16428-Jan-2014Incorporating isolated molybdenum (Mo) atoms into bilayer epitaxial graphene on 4H-SiC(0001)Wan, W.; Li, H.; Huang, H.; Wong, S.L.; Lv, L.; Gao, Y.; Wee, A.T.S. 
1651-Nov-2000Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperatureZhang, K.; Zhu, F.; Huan, C.H.A. ; Wee, A.T.S. 
16615-Nov-2000Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio frequency magnetron sputteringTay, S.T.; Jiang, X.H.; Huan, C.H.A. ; Wee, A.T.S. ; Liu, R. 
167Aug-2001Influence of sulphonation on polymer and polymer blend surfaces studied by atomic force microscopyWee, A.T.S. ; Guo, Y.P. ; Tan, K.C.; Wang, H.Q. ; Leong, T.K.; Huan, C.H.A. 
168Jun-2002Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiCChang, W.; Feng, Z.C. ; Lin, J. ; Liu, R. ; Wee, A.T.S. ; Tone, K.; Zhao, J.H.
16927-May-2010InSbN based p-n junctions for infrared photodetectionChen, X.Z.; Zhang, D.H.; Liu, W.; Wang, Y.; Li, J.H.; Wee, A.T.S. ; Ramam, A.
1701-Jan-2011Interaction of copper with sulfur on the sulfur-terminated Si(1 1 1)-(7 × 7) surfaceZhang, Y.P. ; Yong, K.S.; Xu, G.Q. ; Gao, X.Y. ; Wang, X.-S. ; Wee, A.T.S. 
1712007Interdiffusion in narrow InGaAsNGaAs quantum wellsLiu, W.; Zhang, D.H.; Huang, Z.M.; Wang, S.Z.; Yoon, S.F.; Fan, W.J.; Liu, C.J. ; Wee, A.T.S. 
1729-Jul-2020Interfacial Oxygen-Driven Charge Localization and Plasmon Excitation in Unconventional SuperconductorsChi Sin Tang ; Xinmao Yin ; Shengwei Zeng ; Jing Wu; Ming Yang; Ping Yang ; Caozheng Diao ; Yuan Ping Feng ; Mark B. H. Breese ; Elbert E. M. Chia; Thirumalai Venkatesan ; Manish Chhowalla; Ariando Ariando ; Andrivo Rusydi ; Andrew T. S. Wee 
173Feb-2009International Journal of Nanoscience: Guest editorialWee, A.T.S. ; Wan, A.C.A.; Feng, Y.P. ; Zhang, H.; Jalil, M.B.A. ; Valiyaveettil, S. 
1745-Oct-2010Interplay of processing, morphological order, and charge-carrier mobility in polythiophene thin films deposited by different methods: Comparison of spin-cast, drop-cast, and inkjet-printed filmsWong, L.-Y. ; Png, R.-Q. ; Silva, F.B.S.; Chua, L.-L. ; Repaka, D.V.M.; Shi-Chen; Gao, X.-Y. ; Ke, L.; Chua, S.-J.; Wee, A.T.S. ; Ho, P.K.H. 
17515-May-2006Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
1762006Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxyFan, W.J.; Cheah, W.K.; Yoon, S.F.; Zhang, D.H.; Liu, R. ; Wee, A.T.S. 
17728-Mar-2013Introduction to the Molecule-Metal InterfaceUeno, N.; Koch, N.; Wee, A.T.S. 
17831-Jan-2000Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopyZhu, F.; Huan, C.H.A. ; Zhang, K.; Wee, A.T.S. 
179Jan-2003Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profilingYeo, K.L.; Wee, A.T.S. ; Liu, R. ; Zhou, F.F.; See, A.
1802002Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealingLoh, S.W.; Zhang, D.H.; Liu, R. ; Li, C.Y.; Wee, A.T.S.