Please use this identifier to cite or link to this item:
Title: Interaction of copper with sulfur on the sulfur-terminated Si(1 1 1)-(7 × 7) surface
Authors: Zhang, Y.P. 
Yong, K.S.
Xu, G.Q. 
Gao, X.Y. 
Wang, X.-S. 
Wee, A.T.S. 
Keywords: Copper
Photoemission spectroscopy
Scanning tunneling microscopy
Issue Date: 1-Jan-2011
Citation: Zhang, Y.P., Yong, K.S., Xu, G.Q., Gao, X.Y., Wang, X.-S., Wee, A.T.S. (2011-01-01). Interaction of copper with sulfur on the sulfur-terminated Si(1 1 1)-(7 × 7) surface. Applied Surface Science 257 (6) : 2038-2041. ScholarBank@NUS Repository.
Abstract: The adsorption of S2 on the Si(1 1 1)-(7 × 7) surface and the interaction of copper and sulfur on this sulfur-terminated Si(1 1 1) surface have been studied using synchrotron irradiation photoemission spectroscopy and scanning tunneling microscopy. The adsorption of S2 at room temperature results in the passivation of silicon dangling bonds of Si(1 1 1)-(7 × 7) surface. Excessive sulfur forms Sn species on the surface. Copper atoms deposited at room temperature directly interact with S-adatoms through the formations of Cu-S bonds. Upon annealing the sample at 300 °C, CuSx nanocrystals were produced on the sulfur-terminated Si(1 1 1) surface. © 2010 Elsevier B.V. All rights reserved.
Source Title: Applied Surface Science
ISSN: 01694332
DOI: 10.1016/j.apsusc.2010.09.048
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.