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Lee Sungjoo

rp01794

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Full Name
Lee Sungjoo
(not current staff)
Variants
Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.
 
Main Affiliation
 
Faculty
 
Email
elelsj@nus.edu.sg
 

Publications

Results 1-20 of 83 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12006100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approachGao, F.; Balakumar, S.; Rui, L.; Lee, S.J. ; Tung, C.-H.; Du, A.; Sudhiranjan, T.; Hwang, W.S.; Balasubramanian, N.; Lo, P.; Dong-Zhi, C.; Kwong, D.-L.
22008Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanismZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.; Cho, B.J. 
311-Jul-2007B-doping of vapour-liquid-solid grown Au-catalysed and Al-catalysed Si nanowires: Effects of B2H6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma processWhang, S.-J. ; Lee, S. ; Chi, D.-Z.; Yang, W.-F.; Cho, B.-J. ; Liew, Y.-F. ; Kwong, D.-L.
4Feb-2003Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applicationsLee, S.J. ; Choi, C.H.; Kamath, A.; Clark, R.; Kwong, D.L.
52008Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAsDalapati, G.K.; Sridhara, A.; Wong, A.S.W.; Chia, C.K.; Lee, S.J. ; Chi, D.
62006Chemically assisted formation of nanocrystals for micro-electronics applicationTan, Z.; Gupta, R.; Samanta, S.K. ; Lee, S. ; Won, J.Y. 
7May-2011Chip-level thermoelectric power generators based on high-density silicon nanowire array prepared with top-down CMOS technologyLi, Y.; Buddharaju, K.; Singh, N.; Lo, G.Q.; Lee, S.J. 
82009CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stackPeng, J.W.; Singh, N.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. 
92007Complementary metal-oxide-semiconductor compatible Al-catalyzed silicon nanowiresWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Liew, Y.F. ; Kwong, D.L. 
102005Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contactChi, D.Z.; Lee, R.T.P.; Chua, S.J.; Lee, S.J. ; Ashok, S.; Kwong, D.-L.
11Feb-2008Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrierZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Chua, K.T.; Yu, M.B.; Cho, B.J. ; Lo, G.Q.; Kwong, D.-L.
122007Doping of Al-catalyzed vapor-liquid-solid grown Si nanowiresWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Zhu, H.C.; Gu, H.L.; Cho, B.J. ; Liew, Y.F. 
13Dec-2003Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate DielectricsLee, S. ; Kwong, D.-L.
142006Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge (001) Schottky contactsYao, H.B.; Chi, D.Z.; Li, R.; Lee, S.J. ; Kwong, D.-L.
152008Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxyChia, C.K.; Dong, J.R.; Chi, D.Z.; Sridhara, A.; Wong, A.S.W.; Suryana, M.; Dalapati, G.K.; Chua, S.J.; Lee, S.J. 
164-Jun-2008Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowireYang, W.F.; Lee, S.J. ; Liang, G.C. ; Whang, S.J. ; Kwong, D.L.
17Oct-2005Electron mobility enhancement using ultrathin pure Ge on Si substrateYeo, C.C.; Cho, B.J. ; Gao, F.; Lee, S.J. ; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W.
182008Energy-band alignments of Hf O2 on p-GaAs substratesDalapati, G.K.; Oh, H.-J. ; Lee, S.J. ; Sridhara, A.; Wong, A.S.W.; Chi, D.
19Oct-2009Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor depositionWang, J. ; Zang, H.; Yu, M.B.; Xiong, Y.Z.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. 
202009Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drainGao, F.; Lee, S.J. ; Kwong, D.L.