100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2006.251052

Title:	100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach
Authors:	Gao, F. Balakumar, S. Rui, L. Lee, S.J. Tung, C.-H. Du, A. Sudhiranjan, T. Hwang, W.S. Balasubramanian, N. Lo, P. Dong-Zhi, C. Kwong, D.-L.
Issue Date:	2006
Citation:	Gao, F.,Balakumar, S.,Rui, L.,Lee, S.J.,Tung, C.-H.,Du, A.,Sudhiranjan, T.,Hwang, W.S.,Balasubramanian, N.,Lo, P.,Dong-Zhi, C.,Kwong, D.-L. (2006). 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 311-313. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2006.251052
Abstract:	Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented. © 2006 IEEE.
Source Title:	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI:	http://scholarbank.nus.edu.sg/handle/10635/83288
ISBN:	1424402069
DOI:	10.1109/IPFA.2006.251052
Appears in Collections:	Staff Publications

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