Please use this identifier to cite or link to this item:
https://doi.org/10.1109/IPFA.2006.251052
DC Field | Value | |
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dc.title | 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach | |
dc.contributor.author | Gao, F. | |
dc.contributor.author | Balakumar, S. | |
dc.contributor.author | Rui, L. | |
dc.contributor.author | Lee, S.J. | |
dc.contributor.author | Tung, C.-H. | |
dc.contributor.author | Du, A. | |
dc.contributor.author | Sudhiranjan, T. | |
dc.contributor.author | Hwang, W.S. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Lo, P. | |
dc.contributor.author | Dong-Zhi, C. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:39:32Z | |
dc.date.available | 2014-10-07T04:39:32Z | |
dc.date.issued | 2006 | |
dc.identifier.citation | Gao, F.,Balakumar, S.,Rui, L.,Lee, S.J.,Tung, C.-H.,Du, A.,Sudhiranjan, T.,Hwang, W.S.,Balasubramanian, N.,Lo, P.,Dong-Zhi, C.,Kwong, D.-L. (2006). 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 311-313. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IPFA.2006.251052" target="_blank">https://doi.org/10.1109/IPFA.2006.251052</a> | |
dc.identifier.isbn | 1424402069 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83288 | |
dc.description.abstract | Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented. © 2006 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IPFA.2006.251052 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/IPFA.2006.251052 | |
dc.description.sourcetitle | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | |
dc.description.page | 311-313 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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