Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2006.251052
Title: 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach
Authors: Gao, F.
Balakumar, S.
Rui, L.
Lee, S.J. 
Tung, C.-H.
Du, A.
Sudhiranjan, T.
Hwang, W.S.
Balasubramanian, N.
Lo, P.
Dong-Zhi, C.
Kwong, D.-L.
Issue Date: 2006
Source: Gao, F.,Balakumar, S.,Rui, L.,Lee, S.J.,Tung, C.-H.,Du, A.,Sudhiranjan, T.,Hwang, W.S.,Balasubramanian, N.,Lo, P.,Dong-Zhi, C.,Kwong, D.-L. (2006). 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 311-313. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2006.251052
Abstract: Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented. © 2006 IEEE.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/83288
ISBN: 1424402069
DOI: 10.1109/IPFA.2006.251052
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