CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack

Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2009.5424284

Title:	CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack
Authors:	Peng, J.W. Singh, N. Lo, G.Q. Kwong, D.L. Lee, S.J.
Issue Date:	2009
Citation:	Peng, J.W.,Singh, N.,Lo, G.Q.,Kwong, D.L.,Lee, S.J. (2009). CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack. Technical Digest - International Electron Devices Meeting, IEDM : 38.2.1-38.2.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2009.5424284
Abstract:	Ge/Si core/shell gate-all-round nanowire pMOSFET integrated with HfO 2/TaN gate stack is demonstrated using fully CMOS compatible process. Devices with 100 nm gate length achieved high ION of ∼946 μA/μm at VG - VT = -0.7 V and VDS = -1 V and on/off ratio of 104 with decent subthreshold behavior. Significant improvement in hole mobility and ballistic efficiency is demonstrated as a result of core/shell channel architecture. © 2009 IEEE.
Source Title:	Technical Digest - International Electron Devices Meeting, IEDM
URI:	http://scholarbank.nus.edu.sg/handle/10635/83550
ISBN:	9781424456406
ISSN:	01631918
DOI:	10.1109/IEDM.2009.5424284
Appears in Collections:	Staff Publications

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