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|Title:||CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack||Authors:||Peng, J.W.
|Issue Date:||2009||Citation:||Peng, J.W.,Singh, N.,Lo, G.Q.,Kwong, D.L.,Lee, S.J. (2009). CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack. Technical Digest - International Electron Devices Meeting, IEDM : 38.2.1-38.2.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2009.5424284||Abstract:||Ge/Si core/shell gate-all-round nanowire pMOSFET integrated with HfO 2/TaN gate stack is demonstrated using fully CMOS compatible process. Devices with 100 nm gate length achieved high ION of ∼946 μA/μm at VG - VT = -0.7 V and VDS = -1 V and on/off ratio of 104 with decent subthreshold behavior. Significant improvement in hole mobility and ballistic efficiency is demonstrated as a result of core/shell channel architecture. © 2009 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/83550||ISBN:||9781424456406||ISSN:||01631918||DOI:||10.1109/IEDM.2009.5424284|
|Appears in Collections:||Staff Publications|
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