Full Name
Lee Sungjoo
(not current staff)
Variants
Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.
 
 
 
Email
elelsj@nus.edu.sg
 

Refined By:
Author:  Lo, G.Q.

Results 1-20 of 22 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12008Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanismZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.; Cho, B.J. 
2May-2011Chip-level thermoelectric power generators based on high-density silicon nanowire array prepared with top-down CMOS technologyLi, Y.; Buddharaju, K.; Singh, N.; Lo, G.Q.; Lee, S.J. 
32009CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stackPeng, J.W.; Singh, N.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. 
4Feb-2008Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrierZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Chua, K.T.; Yu, M.B.; Cho, B.J. ; Lo, G.Q.; Kwong, D.-L.
5Oct-2009Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor depositionWang, J. ; Zang, H.; Yu, M.B.; Xiong, Y.Z.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. 
62006Fabrication of high Ge content SiGe layer on Si by Ge condensation techniqueBalakumar, S.; Jun Wei, T.; Tung, C.H.; Lo, G.Q.; Nguyen, H.S.; Fong, C.S.; Agarwal, A.; Kumar, R.; Balasubramanian, N.; Lee, S.J. ; Kwong, D.L.
7Jan-2011Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible processPeng, J.W.; Singh, N.; Lo, G.Q.; Bosman, M.; Ng, C.M.; Lee, S.J. 
8Nov-2007Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budgetLoh, W.Y.; Wang, J. ; Ye, J.D.; Yang, R.; Nguyen, H.S.; Chua, K.T.; Song, J.F.; Loh, T.H.; Xiong, Y.Z.; Lee, S.J. ; Yu, M.B.; Lo, G.Q.; Kwong, D.L.
92008Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistorsPeng, J.W.; Lee, S.J. ; Liang, G.C.A. ; Singh, N.; Zhu, S.Y.; Lo, G.Q.; Kwong, D.L.
102007Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platformWang, J. ; Loh, W.Y.; Zang, H.; Yu, M.B.; Chua, K.T.; Loh, T.H.; Ye, J.D.; Yang, R.; Wang, X.L.; Lee, S.J. ; Cho, B.J. ; Lo, G.Q.; Kwong, D.L.
112008Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gateLin, J.Q.; Lee, S.J. ; Oh, H.J. ; Lo, G.Q.; Kwong, D.L.; Chi, D.Z.
12Sep-2008Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguideWang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Tan, S.M.F.; Yu, M.B.; Lee, S.J. ; Lo, G.Q.; Kwong, D.L.
1310-May-2006Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technologyLi, R.; Yao, H.B.; Lee, S.J. ; Chi, D.Z.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.
142010Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI waferZang, H.; Wang, J. ; Lo, G.Q.; Lee, S.J. 
152007Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 bufferLoh, T.H.; Nguyen, H.S.; Murthy, R.; Yu, M.B.; Loh, W.Y.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.L.; Wang, J. ; Lee, S.J. 
16Sep-2011Silicon nanowire forthermoelectric applications: Effects of contact resistanceLi, Y.; Buddharaju, K.; Singh, N.; Lo, G.Q.; Lee, S.J. 
172010Silicon nanowires thermoelectric devicesLi, Y.; Buddharaju, K.; Singh, N.; Lo, G.Q.; Lee, S.J. 
182010Silicon vertical-nano-wire based photovaltaic deviceWang, J. ; Li, Z.H.; Singh, N.; Lo, G.Q.; Lee, S.J. 
192006Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrateBalakumar, S.; Tung, C.H.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.L.; Fei, G.; Lee, S.J. 
202008Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopyOh, H.J. ; Lin, J.Q.; Lee, S.J. ; Dalapati, G.K.; Sridhara, A.; Chi, D.Z.; Chua, S.J.; Lo, G.Q.; Kwong, D.L.