1. ScholarBank@NUS

Chunxiang Zhu

rp01634

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Refined By:
Author:  Zhu, C.
Department:  COLLEGE OF DESIGN AND ENGINEERING
Subject:  HfO2

Results 1-9 of 9 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
1Apr-2007Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivationWu, N.; Zhang, Q.; Balasubramanian, N.; Chan, D.S.H. ; Zhu, C. 
2Jun-2010Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETsXie, R.; Phung, T.H.; Yu, M.; Zhu, C. 
32008Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectricsYang, J.-J.; Wang, X.-P.; Zhu, C.-X. ; Li, M.-F. ; Yu, H.-Y.; Loh, W.-Y.; Kwong, D.-L. 
4Jun-2006Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivationWu, N.; Zhang, Q.; Chan, D.S.H. ; Balasubramanian, N.; Zhu, C. 
5Dec-2004Improvements on surface carrier mobility and electrical stability of MOSFETs using HfTaO gate dielectricYu, X.; Zhu, C. ; Yu, M.; Kwong, D.-L.
62009Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thicknessXie, R.; Phung, T.H.; He, W. ; Yu, M.; Zhu, C. 
7Jul-2003Lanthanide (Tb)-doped HfO2 for high-density MIM capacitorsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A.; Kwong, D.-L.
8Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, S.J. ; Cho, B.J. ; Li, M.F. ; Yu, X.; Zhu, C. ; Chin, A.; Kwong, D.-L.
92007Reliability analysis of thin HfO2/SiO2 gate dielectric stackSamanta, P.; Zhu, C. ; Chan, M.