Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
 
 
Email
elezhucx@nus.edu.sg
 

Refined By:
Author:  Zhu, C.-X.
Department:  COLLEGE OF DESIGN AND ENGINEERING
Author:  Kang, E.T.

Results 1-20 of 58 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
128-Apr-2006A dynamic random access memory based on a conjugated copolymer containing electron-donor and -acceptor moietiesLing, Q.-D. ; Song, Y.; Lim, S.-L.; Teo, E.Y.-H. ; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
2Aug-2007A flexible polymer memory deviceLi, L. ; Ling, Q.-D. ; Lim, S.-L.; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G. 
32006A WORM-type memory device with rectifying effect based on a conjugated copolymer of PF6Eu on Si substrateTan, Y.P.; Ling, Q.D. ; Teo Eric, Y.H.; Song, Y.; Lim, S.L.; Lo Patrick, G.Q.; Kang, E.T. ; Zhu, C. ; Chan, D.S.H. 
42009An organic-based diode-memory device with rectifying property for crossbar memory array applicationsTeo, E.Y.H. ; Zhang, C. ; Lim, S.L.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
52006Bi-stable state for WORM application based on carbazole-containing polymerTeo, E.Y.H. ; Ling, Q. ; Song, Y.; Tan, Y.P.; Wang, W.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
62008Bilayer memory device based on a conjugated copolymer and a carbon nanotube/polyaniline compositeLi, L. ; Ling, Q.-D. ; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G. 
72009Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complexLiu, G. ; Zhuang, X.; Chen, Y.; Zhang, B.; Zhu, J.; Zhu, C.-X. ; Neoh, K.-G. ; Kang, E.-T. 
830-Nov-2006Bistable electrical switching and memory effects in a thin film of copolymer containing electron donor-acceptor moieties and europium complexesLing, Q.-D. ; Wang, W.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
92007Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube compositesLiu, G. ; Ling, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Liaw, D.-J.; Chang, F.-C.; Zhu, C.-X. ; Chan, D.S.-H. 
1016-Oct-2007Conformation-induced electrical bistability in non-conjugated polymers with pendant carbazole moietiesLim, S.L.; Ling, Q. ; Teo, E.Y.H. ; Zhu, C.X. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.G. 
112-Dec-2011Conjugated polymer-grafted reduced graphene oxide for nonvolatile rewritable memoryZhang, B.; Liu, G. ; Chen, Y.; Zeng, L.-J.; Zhu, C.-X. ; Neoh, K.-G. ; Wang, C.; Kang, E.-T. 
1218-Apr-2010Conjugated-polymer-functionalized graphene oxide: Synthesis and nonvolatile rewritable memory effectZhuang, X.-D.; Chen, Y.; Liu, G. ; Li, P.-P.; Zhu, C.-X. ; Kang, E.-T. ; Neoh, K.-G. ; Zhang, B.; Zhu, J.-H.; Li, Y.-X.
1326-Jul-2005Controlled micropatterning of a Si(100) surface by combined nitroxide-mediated and atom transfer radical polymerizationsXu, F.J. ; Song, Y.; Cheng, Z.P. ; Zhu, X.L.; Zhu, C.X. ; Kang, E.T. ; Neoh, K.G. 
14Mar-2011Effects of cathode confinement on the performance of polymer/fullerene photovoltaic cells in the thermal treatmentZhang, C.; Hao, Y.; Tong, S.-W. ; Lin, Z.; Feng, Q.; Kang, E.-T. ; Zhu, C. 
152008Efficient multilayer organic solar cells using the optical interference peakZhang, C. ; Tong, S.W. ; Jiang, C.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
1628-Apr-2011Electrical conductivity switching and memory effects in poly(N-vinylcarbazole) derivatives with pendant azobenzene chromophores and terminal electron acceptor moietiesLiu, G. ; Zhang, B.; Chen, Y.; Zhu, C.-X. ; Zeng, L.; Siu-Hung Chan, D.; Neoh, K.-G. ; Chen, J.; Kang, E.-T. 
17Feb-2007Electrically bistable thin-film device based on PVK and GNPs polymer materialSong, Y.; Ling, Q.D. ; Lim, S.L.; Teo, E.Y.H. ; Tan, Y.P.; Li, L.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
182009Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cellsZhang, C. ; Tong, S.W. ; Zhu, C. ; Jiang, C.; Kang, E.T. ; Chan, D.S.H. 
192009Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)Teo, E.Y.H. ; Zhang, C. ; Lim, S.L.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
208-Mar-2011Flash-memory effect for polyfluorenes with on-chain iridium(III) complexesLiu, S.-J.; Lin, Z.-H.; Zhao, Q.; Ma, Y.; Shi, H.-F.; Yi, M.-D.; Ling, Q.-D.; Fan, Q.-L.; Zhu, C.-X. ; Kang, E.-T. ; Huang, W.