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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Results 181-200 of 271 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1811-Feb-2008Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performanceZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
182May-2008Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentrationKoh, A.T.-Y.; Lee, R.T.-P. ; Liu, F.-Y.; Liow, T.-Y.; Tan, K.M.; Wang, X.; Samudra, G.S. ; Balasubramanian, N.; Chi, D.-Z.; Yeo, Y.-C. 
1832015Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal-ferroelectric-metal-insulator-semiconductor FET and its dynamic behaviour based on Landau theoryLi, Yang; Lian, Yong ; Samudra, Ganesh S. 
1842007Realistic simulation of reverse characteristics of 4H-SIC power DiodeWei, G.; Liang, Y.C. ; Samudra, G.S. 
1852011Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devicesWei, G.; Liang, Y.C. ; Samudra, G.S. 
186Jan-2012Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devicesWei, G.; Liang, Y.C. ; Samudra, G.S. 
1872008Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETsWang, G.H.; Toh, E.-H.; Chan, T.K.; Osipowicz, T.; Foo, Y.-L.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1882007Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistorsToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
189May-1994Role of velocity saturation in the switching delay of an R-C loaded inverterSamudra, Ganesh ; Yong, Alan; Lee, Teng Kiat; Arora, Vijay K. 
1902007Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealingLee, R.T.-P. ; Koh, A.T.-Y.; Liu, F.-Y.; Fang, W.-W.; Liow, T.-Y.; Tan, K.-M.; Lim, P.-C.; Lim, A.E.-J.; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Lo, G.-Q.; Wang, X.; Low, D.K.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
1911-Apr-1999Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect TransistorSamudra, G. ; Rajendran, K. 
1921-Apr-1999Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect TransistorSamudra, G. ; Rajendran, K. 
1932010Schottky barrier height modulation with aluminum segregation and pulsed laser anneal: A route for contact resistance reductionKoh, S.-M.; Ng, C.-M.; Liu, P.; Mo, Z.-Q.; Wang, X.; Zheng, H.; Zhao, Z.-Y.; Variam, N.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
1941-Oct-2011Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser annealKoh, S.-M.; Wang, X.; Thanigaivelan, T.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
195Mar-2005SDODEL MOSFET for performance enhancementChui, K.J.; Samudra, G.S. ; Yeo, Y.-C. ; Tee, K.-C.; Leong, K.-W.; Tee, K.M.; Benistant, F.; Chan, L.
1962008Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Koh, S.-M.; Koh, A.T.-Y.; Liow, T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Fang, W.-W.; Zhu, M. ; Chan, L.; Balasubramaniam, N.; Samudra, G. ; Yeo, Y.-C. 
197Oct-2009Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drainWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
198Nov-2005Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory applicationSamanta, S.K. ; Tan, Z.Y.L.; Yoo, W.J. ; Samudra, G. ; Lee, S. ; Bera, L.K.; Balasubramanian, N.
1992009Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisonsChin, S.K.; Ligatchev, V.; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
2002009Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisonsChin, S.K.; Ligatchev, V.; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.