1. ScholarBank@NUS

Samudra,Ganesh S

rp00141

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Author:  Samudra, G.
Department:  ELECTRICAL AND COMPUTER ENGINEERING

Results 261-271 of 271 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
2611997Trends in dram dielectricsTang, K.S.; Lau, W.S. ; Samudra, G.S. 
2621997Trends in dram dielectricsTang, K.S.; Lau, W.S. ; Samudra, G.S. 
263Nov-2003Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column WidthYang, X.; Liang, Y.C. ; Samudra, G.S. ; Liu, Y.
2642002Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generationLiang, Y.C. ; Yang, X.; Samudra, G.S. ; Gan, K.P.; Liu, Y. 
2652004Tunable trench gate power MOSFET: A feasible superjunction device and process technologyYang, X.; Liang, Y.C. ; Samudra, G.S. ; Liu, Y.
26612-Sep-2005Tungsten nanocrystals embedded in high- k materials for memory applicationSamanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Tok, E.S. ; Bera, L.K.; Balasubramanian, N.
2672009Tunneling field-effect transistor: Effect of strain and temperature on tunneling currentGuo, P.-F.; Yang, L.-T.; Yang, Y.; Fan, L.; Han, G.-Q. ; Samudra, G.S. ; Yeo, Y.-C. 
2682008Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancementWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tripathy, S. ; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
2691999VLSI design for implementation of transform domain adaptive filtersNajafi, A.; Farhang-Boroujeny, B. ; Samudra, G.S. 
2701999Yield optimization by design centering & worst-case distance analysisSamudra, G.S. ; Chen, H.M.; Chan, D.S.H. ; Ibrahim, Yaacob 
271Jun-2007Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFETLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.H.; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C.