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Choi, W.K.

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Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
Main Affiliation
 
Faculty
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Author:  Pey, K.L.

Results 21-27 of 27 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
211-Jan-2000Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor depositionChoi, W.K. ; Chen, J.H. ; Bera, L.K. ; Feng, W.; Pey, K.L. ; Mi, J.; Yang, C.Y.; Ramam, A. ; Chua, S.J. ; Pan, J.S. ; Wee, A.T.S. ; Liu, R. 
221-Jun-2000Structural characterization of rapid thermally oxidized silicon-germanium-carbon alloy filmsChoi, W.K. ; Bera, L.K. ; Chen, J.H. ; Feng, W.; Pey, K.L. ; Yoong, H.; Mi, J.; Zhang, F.; Yang, C.Y.
232004Study of Ge out-diffusion during nickel (Platinum - 0, 5, 10 at.%) germanosilicide formationJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.
24Dec-2007The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2Yu, H.P.; Pey, K.L.; Choi, W.K. ; Dawood, M.K.; Chew, H.G.; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.
25Sep-2004The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °CJin, L.J.; Pey, K.L. ; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.; Tung, C.H.
26Nov-2002Thermal reaction of nickel and Si0.75Ge0.25 alloyPey, K.L. ; Choi, W.K. ; Chattopadhyay, S.; Zhao, H.B.; Fitzgerald, E.A.; Antoniadis, D.A.; Lee, P.S.
272006Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gateYu, H.P.; Pey, K.L.; Choi, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.; Tung, C.H.