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Chua Soo Jin

rp04195

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Full Name
Chua Soo Jin
Variants
Chua, Soo-Jin
CHUA SOON JIN
Chua, S.-J.
CHUA, SOO-JIN
Jin, C.S.
Jin Chua, S.
S.J. Chua
Chua, Soojin
Soo Jin, Chua
Soo-Jin, C.
Jin, Chua Soo
Chua, S.
Chua, Soo-jin
Chua Soo Jin
CHUA, SOO JIN
Chun, S.-J.
Soo, J.C.
Chua, Soo Jin
Chua, S.J.
CHUA, SOON JIN
 
Main Affiliation
 
Faculty
 
Email
elecsj@nus.edu.sg
 
Other emails
 

Publications

Results 41-60 of 448 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
411-Jun-2006Brownian motion field dependent mobility theory of hopping transport processKe, L.; Chua, S.J. ; Han, R.C.C.; Ting, L.T.; Vijila, C.
421998Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layerWang, Z.J.; Chua, S.-J. ; Zhou, F.; Wang, W.; Wu, R.H.
3May-2004Calculation of the R 0A product in n +-n-p and p +-p-n GaInAsSb infrared detectorsYuan, T. ; Chua, S.-J. ; Jin, Y.
41-Aug-1998Carrier capture in InAs monolayer quantum wells grown on GaAs substratesChua, S.J. ; Xu, S.J. ; Zhang, X.H.; Zhang, X.
5Sep-1999Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopyLi, Z.-F.; Lu, W.; Ye, H.-J.; Chen, Z.-H.; Yuan, X.-Z.; Dou, H.-F.; Shen, S.-C.; Li, G.; Chua, S.J. 
61995Carrier concentration saturation in n type AlxGa1-xAsDu, A.Y.; Li, M.F. ; Chong, T.C. ; Chua, S.J. 
71998Characteristics of InGaAs quantum dot infrared photodetectorsXu, S.J. ; Chua, S.J. ; Mei, T.; Wang, X.C.; Zhang, X.H.; Karunasiri, G. ; Fan, W.J.; Wang, C.H.; Jiang, J.; Wang, S.; Xie, X.G.
81-Aug-2004Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor depositionLiu, W.; Soh, C.B.; Chen, P.; Chua, S.J. 
9Mar-2004Characterization of graded InGaN/GaN epilayers grown on sapphireSong, T.L.; Chua, S.J. ; Fitzgerald, E.A.; Chen, P.; Tripathy, S.
102003Characterization of high quality continuous GaN films grown on Si-doped cracked GaN templateSoh, C.B.; Zhang, J. ; Chi, D.Z.; Chua, S.J. 
111999Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scatteringHou, Y.T. ; Feng, Z.C.; Li, M.F. ; Chua, S.J. 
121-Aug-1998Characterization of titanium silicide by Raman spectroscopy for submicron IC processingLim, E.H.; Karunasiri, G. ; Chua, S.J. ; Shen, Z.X. ; Wong, H.; Pey, K.L.; Lee, K.H.; Chan, L.
134-Jan-2000Cmos gate architecture for integration of salicide process in sub 0.1. .muM devicesHO, CHAW SING; KARUNASIRI, R. P. G. ; CHUA, SOO JIN ; PEY, KIN LEONG ; LEE, KONG HEAN
142021CMOS-Compatible Electronic-Plasmonic Transducers Based on Plasmonic Tunnel Junctions and Schottky DiodesFANGWEI WANG ; YAN LIU; Thanh Xuan Hoang; Hong-Son Chu; Chua, Soo-Jin ; CHRISTIAN ALBERTUS NIJHUIS
151-Aug-2006Colloidal woodpile structure: Three-dimensional photonic crystal with a dual periodicityYan, Q. ; Zhao, X.S. ; Teng, J.H.; Chua, S.J. 
161994Comment on "direct evidence for the negative-U nature of the DX center in AlxGa1-xAs"Li, M.F. ; Du, A.Y.; Luo, Y.Y.; Chua, S.J. 
172002Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wellsSun, W.H.; Wang, L.S.; Chua, S.J. 
182005Comparative study of optical properties of nanoporous GaN prepared by uv-assisted electrochemical and electroless etchingVajpeyi, A.P.; Tripathy, S.; Chua, S.J. ; Arokiaraj, J.; Fitzgerald, E.A.
192002Comparative study of trap levels observed in undoped and Si-doped GaNSoh, C.B.; Chi, D.Z.; Lim, H.F.; Chua, S.J. 
202-Sep-2002Conformational analysis (ab initio HF/3-21G*) and optical properties of poly(thiophene-phenylene-thiophene) (PTPT)Pan, J.-F. ; Chua, S.-J. ; Huang, W.