Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/50538
Title: Carrier capture in InAs monolayer quantum wells grown on GaAs substrates
Authors: Chua, S.J. 
Xu, S.J. 
Zhang, X.H.
Zhang, X.
Issue Date: 1-Aug-1998
Source: Chua, S.J.,Xu, S.J.,Zhang, X.H.,Zhang, X. (1998-08-01). Carrier capture in InAs monolayer quantum wells grown on GaAs substrates. Microelectronic Engineering 43-44 : 287-293. ScholarBank@NUS Repository.
Abstract: In high quality InAs monolayer (ML)/GaAs heterostructures, InAs behaves as a luminescence centre. This centre exchanges carriers with the GaAs layer through trapping and detrapping. Temperature dependence of the ratio between the integrated photoluminescence (PL) intensity from the InAs and the GaAs layers reveals the competition between capture and release of carriers by the InAs layer. It is found that the thermal escape of the carriers in the InAs layer is the dominant quenching mechanism of the InAs PL peak at higher temperatures. A good agreement is obtained between the experiment and the proposed model. 1998 Published by Elsevier Science B.V. All rights reserved.
Source Title: Microelectronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/50538
ISSN: 01679317
Appears in Collections:Staff Publications

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