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|Title:||Characteristics of InGaAs quantum dot infrared photodetectors|
|Authors:||Xu, S.J. |
|Citation:||Xu, S.J., Chua, S.J., Mei, T., Wang, X.C., Zhang, X.H., Karunasiri, G., Fan, W.J., Wang, C.H., Jiang, J., Wang, S., Xie, X.G. (1998). Characteristics of InGaAs quantum dot infrared photodetectors. Applied Physics Letters 73 (21) : 3153-3155. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122703|
|Abstract:||A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength. © 1998 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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