Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80324
Title: Characterization of titanium silicide by Raman spectroscopy for submicron IC processing
Authors: Lim, E.H.
Karunasiri, G. 
Chua, S.J. 
Shen, Z.X. 
Wong, H.
Pey, K.L.
Lee, K.H.
Chan, L.
Keywords: Phase transformation
Raman spectroscopy
SALICIDE
TiSi2
Issue Date: 1-Aug-1998
Source: Lim, E.H.,Karunasiri, G.,Chua, S.J.,Shen, Z.X.,Wong, H.,Pey, K.L.,Lee, K.H.,Chan, L. (1998-08-01). Characterization of titanium silicide by Raman spectroscopy for submicron IC processing. Microelectronic Engineering 43-44 : 611-617. ScholarBank@NUS Repository.
Abstract: The formation of the low resistivity C54 phase of titanium silicide (TiSi2) used in submicron IC technology was studied using Raman spectroscopy. TiSi2 on both pad areas (100 X 100 μm2) as well as polycrystalline and amorphous silicon narrow lines (line widths: 0.35 to 1.0 μm) were formed under various rapid thermal annealing temperatures. The results showed that Raman spectroscopy could accurately identify the temperature ranges of the formation, transformation and agglomeration of TiSi2. Qualitative analysis confirmed the difficulty of forming C54 phase TiSi2 on narrow polycrystalline lines. TiSi2 was also found to form at a lower annealing temperature on amorphous Si than on polycrystalline Si, which is attributed to the random nature of amorphous Si, although its degradation also occurs earlier. These results demonstrate the applicability of Raman spectroscopy for characterizing TiSi2 used in sub-half-micron IC processing. 1998 Published by Elsevier Science B.V. All rights reserved.
Source Title: Microelectronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/80324
ISSN: 01679317
Appears in Collections:Staff Publications

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