Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80313
Title: Carrier concentration saturation in n type AlxGa1-xAs
Authors: Du, A.Y.
Li, M.F. 
Chong, T.C. 
Chua, S.J. 
Issue Date: 1995
Citation: Du, A.Y.,Li, M.F.,Chong, T.C.,Chua, S.J. (1995). Carrier concentration saturation in n type AlxGa1-xAs. Materials Science Forum 196-201 (pt 1) : 279-284. ScholarBank@NUS Repository.
Abstract: Due to the negative U property of donor DX center, the Fermi energy tends to be pinned to the DX center free energy level when the Si doping concentration is increased. Correspondingly, the carrier concentration tends to saturate. It is a general property in n-type compound semiconductors when donor impurities induce negative U DX levels in the energy gap. In this work, in a series of Al0.3Ga0.7As epitaxial layers with different Si doping concentrations varied from 1×1017cm-3 to 1.5×1018cm-3, carrier concentration saturation effect was observed by Hall measurements. This effect will have great influence in designing optoelectronic and fast microelectronic devices.
Source Title: Materials Science Forum
URI: http://scholarbank.nus.edu.sg/handle/10635/80313
ISSN: 02555476
Appears in Collections:Staff Publications

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