Please use this identifier to cite or link to this item:
|Title:||Calculation of the R 0A product in n +-n-p and p +-p-n GaInAsSb infrared detectors|
|Authors:||Yuan, T. |
|Keywords:||Ga xIn 1-xAs 1-ySb y|
|Citation:||Yuan, T., Chua, S.-J., Jin, Y. (2004-05). Calculation of the R 0A product in n +-n-p and p +-p-n GaInAsSb infrared detectors. Infrared Physics and Technology 45 (3) : 181-189. ScholarBank@NUS Repository. https://doi.org/10.1016/j.infrared.2003.09.003|
|Abstract:||In this paper, the zero-bias resistance areas product R 0A is calculated in the n +-n-p and p +-p-n Ga 0.8In 0.2As 0.81Sb 0.19 infrared detectors, on the base of the material parameters in the three layers. The calculated results show that parameters in the heavily doped layer in the different structures have different influences on R 0A. Moreover, R 0A in the n +-n-p structure is higher than that in the p +-p-n structure because the higher carrier concentration in the n +-region for the n +-n-p structure improves R 0A whereas the one in the p +-region for the p +-p-n structure reduces R 0A. © 2003 Elsevier B.V. All rights reserved.|
|Source Title:||Infrared Physics and Technology|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 7, 2018
WEB OF SCIENCETM
checked on Jul 23, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.