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|Title:||Characterization of graded InGaN/GaN epilayers grown on sapphire|
|Citation:||Song, T.L., Chua, S.J., Fitzgerald, E.A., Chen, P., Tripathy, S. (2004-03). Characterization of graded InGaN/GaN epilayers grown on sapphire. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (2) : 287-292. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1644114|
|Abstract:||The graded InGaN/GaN epilayers grown on sapphire were studied. The characterization of the InGaN/Gan epilayers were done using atomic force microscopy, scanning electron microscopy, micro-Raman spectroscopy and photoluminescence techniques. The influence of graded InGaN on the strain and the shift of the photoluminescence (PL) spectra was also studied. It was found that the compressive strain was much lower compared to the conventional two-step GaN layer grown at high temperature on sapphire substrate.|
|Source Title:||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Appears in Collections:||Staff Publications|
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