Characterization of graded InGaN/GaN epilayers grown on sapphire

Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1644114

Title:	Characterization of graded InGaN/GaN epilayers grown on sapphire
Authors:	Song, T.L. Chua, S.J. Fitzgerald, E.A. Chen, P. Tripathy, S.
Issue Date:	Mar-2004
Citation:	Song, T.L., Chua, S.J., Fitzgerald, E.A., Chen, P., Tripathy, S. (2004-03). Characterization of graded InGaN/GaN epilayers grown on sapphire. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (2) : 287-292. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1644114
Abstract:	The graded InGaN/GaN epilayers grown on sapphire were studied. The characterization of the InGaN/Gan epilayers were done using atomic force microscopy, scanning electron microscopy, micro-Raman spectroscopy and photoluminescence techniques. The influence of graded InGaN on the strain and the shift of the photoluminescence (PL) spectra was also studied. It was found that the compressive strain was much lower compared to the conventional two-step GaN layer grown at high temperature on sapphire substrate.
Source Title:	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
URI:	http://scholarbank.nus.edu.sg/handle/10635/55274
ISSN:	07342101
DOI:	10.1116/1.1644114
Appears in Collections:	Staff Publications

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