Please use this identifier to cite or link to this item:
|Title:||Characterization of graded InGaN/GaN epilayers grown on sapphire|
|Citation:||Song, T.L., Chua, S.J., Fitzgerald, E.A., Chen, P., Tripathy, S. (2004-03). Characterization of graded InGaN/GaN epilayers grown on sapphire. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (2) : 287-292. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1644114|
|Abstract:||The graded InGaN/GaN epilayers grown on sapphire were studied. The characterization of the InGaN/Gan epilayers were done using atomic force microscopy, scanning electron microscopy, micro-Raman spectroscopy and photoluminescence techniques. The influence of graded InGaN on the strain and the shift of the photoluminescence (PL) spectra was also studied. It was found that the compressive strain was much lower compared to the conventional two-step GaN layer grown at high temperature on sapphire substrate.|
|Source Title:||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 18, 2018
WEB OF SCIENCETM
checked on Mar 21, 2018
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.