Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83563
Title: Comparative study of trap levels observed in undoped and Si-doped GaN
Authors: Soh, C.B.
Chi, D.Z.
Lim, H.F.
Chua, S.J. 
Issue Date: 2002
Source: Soh, C.B.,Chi, D.Z.,Lim, H.F.,Chua, S.J. (2002). Comparative study of trap levels observed in undoped and Si-doped GaN. Materials Research Society Symposium - Proceedings 719 : 415-420. ScholarBank@NUS Repository.
Abstract: In this paper, deep level defects in undoped and Si-doped GaN have been studied using digital deep level transient spectroscopy. Common trap levels at Ec -ET ∼ 0.15-0.20 eV and 0.59-0.62 eV were detected for both undoped and Si-doped samples. For the doped samples, three additional defect levels at Lc-Et ∼ 0.11, 0.28, and 0.45 eV were detected. The concentration of the 0.15-0.20 eV was found to be much higher in undoped GaN that also shows higher dislocation density. Based on this correlation and the logarithmic capture behavior observed for this level, indicative of extended defect nature, we attribute the 0.15-0.20 eV level to dislocation related defects. On the other hand, the 0.28 and 0.45eV trap levels are tentatively attributed to Si-related defects simply due to the fact that these two levels were observed only in Si-doped GaN. The 0.11eV trap level, which exhibits an exponential capture kinetic, is believed to be related to nitrogen vacancies.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83563
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

17
checked on Feb 17, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.