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Yuan Ping Feng

rp00403

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Full Name
Yuan Ping Feng
Variants
Feng, Y.-P.
Ping Feng, Y.
Yuanping, F.
Feng Y.P.
Feng, Y.
Yuan-Ping, F.
Feng, Yuan Ping
Feng, Y.P.
Feng, Y.-Y.
Feng, Yuan-ping
Yuan Ping Feng
 
Main Affiliation
 
Faculty
 
Email
phyfyp@nus.edu.sg
 

Publications

Refined By:
Author:  Feng, Y.P.
Author:  Wang, S.J.

Results 1-20 of 32 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
12006Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfacesDong, Y.F.; Mi, Y.Y.; Feng, Y.P. ; Huan, A.C.H.; Wang, S.J.
22007Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectricYang, M. ; Wang, S.J.; Peng, G.W. ; Wu, R.Q. ; Feng, Y.P. 
32020Anisotropic Collective Charge Excitations in Quasimetallic 2D Transition-Metal DichalcogenidesTang, C.S.; Yin, X. ; Yang, M.; Wu, D.; Wu, J.; Wong, L.M.; Li, C. ; Tong, S.W.; Chang, Y.-H.; Ouyang, F.; Feng, Y.P. ; Wang, S.J.; Chi, D.; Breese, Mark B. H.; Zhang, W.; Rusydi, A. ; Wee, A.T.S. 
4Jul-2010Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistorsWang, S.J.; Wong, T.I.; Chen, Q.; Yang, M. ; Wong, L.M.; Chai, J.W.; Zhang, Z.; Pan, J.S.; Feng, Y.P. 
516-Jan-2014Atomic N modified rutile TiO2(110) surface layer with significant visible light photoactivityTao, J.; Yang, M. ; Chai, J.W.; Pan, J.S.; Feng, Y.P. ; Wang, S.J.
62008Band alignment and thermal stability of HfO2 gate dielectric on SiCChen, Q.; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
715-May-2010Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effectsYang, M. ; Deng, W.S.; Chen, Q.; Feng, Y.P. ; Wong, L.M.; Chai, J.W.; Pan, J.S.; Wang, S.J.; Ng, C.M.
8Sep-2007Band engineering in the high-k dielectrics gate stacksWang, S.J.; Dong, Y.F.; Feng, Y.P. ; Huan, A.C.H.
92009Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculationChen, Q.; Yang, M. ; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
102006Chemical tuning of band alignments for metal gate/high- κ oxide interfacesDong, Y.F.; Wang, S.J.; Feng, Y.P. ; Huan, A.C.H.
112006Effect of nitrogen doping on optical properties and electronic structures of SrTiO3 filmsMi, Y.Y.; Wang, S.J.; Chai, J.W.; Pan, J.S.; Huan, C.H.A.; Feng, Y.P. ; Ong, C.K. 
122006Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectricWang, S.J.; Chai, J.W.; Dong, Y.F.; Feng, Y.P. ; Sutanto, N.; Pan, J.S.; Huan, A.C.H.
1315-Jan-2011Effects of nitrogen incorporation on the electronic structure of rutile- TiO2Chai, J.W.; Yang, M. ; Chen, Q.; Pan, J.S.; Zhang, Z.; Feng, Y.P. ; Wang, S.J.
142007Electronic structure of germanium nitride considered for gate dielectricsYang, M. ; Wang, S.J.; Feng, Y.P. ; Peng, G.W. ; Sun, Y.Y. 
152009Electronic structures of Β -Si3 N4 (0001) /Si (111) interfaces: Perfect bonding and dangling bond effectsYang, M. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Sha, Z.D.; Cai, Y.Q. ; Feng, Y.P. ; Wang, S.J.
1617-Oct-2012Epitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layerWong, T.I.; Tan, H.R.; Sentosa, D.; Wong, L.M.; Wang, S.J.; Feng, Y.P. 
1729-May-2006Evolution of Schottky barrier heights at Ni/HfO2 interfacesLi, Q.; Dong, Y.F.; Wang, S.J.; Chai, J.W.; Huan, A.C.H.; Feng, Y.P. ; Ong, C.K. 
182006Evolution of Schottky barrier heights at Ni/HfO2interfacesLi, Q. ; Dong, Y.F.; Feng, Y.P. ; Ong, C.K. ; Wang, S.J.; Chai, J.W.; Huan, A.C.H.
19Dec-2011Fabrication of a TiNx/Ni/Au contact on ZnO films with high thermal stability and low resistanceChai, J.W.; Yang, M. ; Chi, D.Z.; Ong, J.L.T.; Wang, S.J.; Zhang, Z.; Pan, J.S.; Feng, Y.P. ; Chua, S.J.
2015-May-2006First-principles studies on initial growth of Ni on MgO(0 0 1) surfaceDong, Y.F.; Wang, S.J.; Mi, Y.Y.; Feng, Y.P. ; Huan, A.C.H.