Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2010.01.115

Title:	Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects
Authors:	Yang, M. Deng, W.S. Chen, Q. Feng, Y.P. Wong, L.M. Chai, J.W. Pan, J.S. Wang, S.J. Ng, C.M.
Keywords:	Gate dielectrics Ge-FETs High-κ
Issue Date:	15-May-2010
Citation:	Yang, M., Deng, W.S., Chen, Q., Feng, Y.P., Wong, L.M., Chai, J.W., Pan, J.S., Wang, S.J., Ng, C.M. (2010-05-15). Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects. Applied Surface Science 256 (15) : 4850-4853. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2010.01.115
Abstract:	High-κ dielectrics SrZrO3 were prepared on Ge(0 0 1) substrate using pulse laser deposition, and band alignments and thermal annealing effects were studied with high resolution X-ray photoemission spectroscopy. Valence and conduction band offsets at this interface were measured to be 3.26 eV and 1.77 eV, respectively. Interfacial Ge oxide layers were found at the interface. After annealing at 600° C, the interfacial Ge oxide layers were eliminated, and the valence band offset increased to 3.50 eV, but the amorphous SrZrO3 became polycrystalline in the meantime. © 2010 Elsevier B.V. All rights reserved.
Source Title:	Applied Surface Science
URI:	http://scholarbank.nus.edu.sg/handle/10635/95847
ISSN:	01694332
DOI:	10.1016/j.apsusc.2010.01.115
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check