Please use this identifier to cite or link to this item:
|Title:||Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistors|
|Citation:||Wang, S.J., Wong, T.I., Chen, Q., Yang, M., Wong, L.M., Chai, J.W., Zhang, Z., Pan, J.S., Feng, Y.P. (2010-07). Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistors. Physica Status Solidi (A) Applications and Materials Science 207 (7) : 1731-1734. ScholarBank@NUS Repository. https://doi.org/10.1002/pssa.200983756|
|Abstract:||In this paper, we report the studies of atomic and electronic structures at ZnO and ZrO 2 interface. The epitaxial heterostructures were grown by laser molecular beam epitaxy and the interface atomic structure was determined by using highresolution transmission electron microscopy (TEM). Band alignment for high-k ZrO 2 layer on ZnO was investigated by in situ X-ray photoemission spectroscopy (XPS) characterization and first-principles calculations based on density functional theory (DFT). The valence and conduction band offsets (CBOs) were found to be 0.27±0.05 eV and 2.16±0.05 eV, respectively. The results are in good agreement with values from theoretical calculations. The large CBO and small lattice mismatch between ZnO and ZrO 2 suggest potential for ZrO 2 to be used as a gate dielectric in ZnO-based transparent electronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.|
|Source Title:||Physica Status Solidi (A) Applications and Materials Science|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 12, 2019
WEB OF SCIENCETM
checked on Jan 2, 2019
checked on Jan 11, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.