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|Title:||Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistors|
|Citation:||Wang, S.J., Wong, T.I., Chen, Q., Yang, M., Wong, L.M., Chai, J.W., Zhang, Z., Pan, J.S., Feng, Y.P. (2010-07). Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistors. Physica Status Solidi (A) Applications and Materials Science 207 (7) : 1731-1734. ScholarBank@NUS Repository. https://doi.org/10.1002/pssa.200983756|
|Abstract:||In this paper, we report the studies of atomic and electronic structures at ZnO and ZrO 2 interface. The epitaxial heterostructures were grown by laser molecular beam epitaxy and the interface atomic structure was determined by using highresolution transmission electron microscopy (TEM). Band alignment for high-k ZrO 2 layer on ZnO was investigated by in situ X-ray photoemission spectroscopy (XPS) characterization and first-principles calculations based on density functional theory (DFT). The valence and conduction band offsets (CBOs) were found to be 0.27±0.05 eV and 2.16±0.05 eV, respectively. The results are in good agreement with values from theoretical calculations. The large CBO and small lattice mismatch between ZnO and ZrO 2 suggest potential for ZrO 2 to be used as a gate dielectric in ZnO-based transparent electronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.|
|Source Title:||Physica Status Solidi (A) Applications and Materials Science|
|Appears in Collections:||Staff Publications|
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