Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssa.200983756
Title: Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistors
Authors: Wang, S.J.
Wong, T.I.
Chen, Q.
Yang, M. 
Wong, L.M.
Chai, J.W.
Zhang, Z.
Pan, J.S.
Feng, Y.P. 
Keywords: Heterostructures
Interface formation
Modeling
Thin-film transistors
ZnO
ZnO 2
Issue Date: Jul-2010
Source: Wang, S.J., Wong, T.I., Chen, Q., Yang, M., Wong, L.M., Chai, J.W., Zhang, Z., Pan, J.S., Feng, Y.P. (2010-07). Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistors. Physica Status Solidi (A) Applications and Materials Science 207 (7) : 1731-1734. ScholarBank@NUS Repository. https://doi.org/10.1002/pssa.200983756
Abstract: In this paper, we report the studies of atomic and electronic structures at ZnO and ZrO 2 interface. The epitaxial heterostructures were grown by laser molecular beam epitaxy and the interface atomic structure was determined by using highresolution transmission electron microscopy (TEM). Band alignment for high-k ZrO 2 layer on ZnO was investigated by in situ X-ray photoemission spectroscopy (XPS) characterization and first-principles calculations based on density functional theory (DFT). The valence and conduction band offsets (CBOs) were found to be 0.27±0.05 eV and 2.16±0.05 eV, respectively. The results are in good agreement with values from theoretical calculations. The large CBO and small lattice mismatch between ZnO and ZrO 2 suggest potential for ZrO 2 to be used as a gate dielectric in ZnO-based transparent electronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi (A) Applications and Materials Science
URI: http://scholarbank.nus.edu.sg/handle/10635/95831
ISSN: 18626300
DOI: 10.1002/pssa.200983756
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