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Kaizhen Han

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Full Name
Kaizhen Han
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Email
elehank@nus.edu.sg
 

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Author:  Kaizhen Han

Results 1-6 of 6 (Search time: 0.01 seconds).

Issue DateTitleAuthor(s)
18-May-2020A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten DisulfideLi Chen ; Lin Wang; Yue Peng; Xuewei Feng ; Soumya Sarkar ; Sifan Li ; Bochang Li ; Liang Liu ; Kaizhen Han ; Xiao Gong ; Jingsheng Chen ; Yan Liu; Genquan Han; Kah Wee Ang 
215-Oct-2019Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structureSamanta, Subhranu ; Gong, Xiao ; Zhang, Panpan ; Han, Kaizhen ; Fong, Xuanyao 
32019High performance Ga2O3 metal-oxide-semiconductor field-effect transistors on an AlN/Si substrateLei, D. ; Han, K. ; Wu, Y. ; Liu, Z.; Gong, X. 
42019Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAMSamanta, Subhranu ; Zhang, Panpan ; Han, Kaizhen ; Gong, Xiao ; Chakraborty, Sandipan ; Li, Yida ; Fong, Xuanyao 
56-Apr-2020Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent UniformitySAMANTA SUBHRANU ; UMESH CHAND ; XU SHENGQIANG ; HAN KAIZHEN ; WU YING ; ANNIE KUMAR ; LI YIDA ; FONG XUANYAO ; THEAN VOON YEW, AARON ; GONG XIAO 
61-Jan-2021Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide ThicknessHan, Kaizhen ; Samanta, Subhranu ; Sun, Chen ; Gong, Xiao