Please use this identifier to cite or link to this item: https://doi.org/10.1109/jeds.2021.3116763
Title: Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
Authors: Han, Kaizhen 
Samanta, Subhranu 
Sun, Chen 
Gong, Xiao 
Keywords: IGZO
short channel devices
thin film transistors
Issue Date: 1-Jan-2021
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Han, Kaizhen, Samanta, Subhranu, Sun, Chen, Gong, Xiao (2021-01-01). Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness. IEEE Journal of the Electron Devices Society 9 : 1125-1130. ScholarBank@NUS Repository. https://doi.org/10.1109/jeds.2021.3116763
Rights: Attribution 4.0 International
Abstract: We report high performance top-gate amorphous Indium-Gallium-Zinc-Oxide thin film transistors (α-IGZO TFTs) featuring the smallest equivalent oxide thickness (EOT) of sub-1.2 nm among all IGZO-channel TFTs, achieving the highest extrinsic peak transconductance (G m,ext ) of 62 μS/μm at a drain to source voltage (V DS )=2V(33.4μS/μm at V DS =1V) and excellent drain induced barrier lowering (DIBL) of 17.6 m V/V, for a device with a channel length (L CH ) of 160 nm. The best long channel device has a subthreshold swing (SS) of 67.5 mV/decade. This was enabled by using an ultra-scaled 5 nm high-k HfO 2 as the gate dielectric. In addition, temperature study was also performed on α-IGZO TFTs. Field effect mobility (μ eff ) show negligible degradation at high temperature, indicating the great potential of α-IGZO TFTs for various emerging applications. © 2013 IEEE.
Source Title: IEEE Journal of the Electron Devices Society
URI: https://scholarbank.nus.edu.sg/handle/10635/232154
ISSN: 2168-6734
DOI: 10.1109/jeds.2021.3116763
Rights: Attribution 4.0 International
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