Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2020.2985787
Title: Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
Authors: SAMANTA SUBHRANU 
UMESH CHAND 
XU SHENGQIANG 
HAN KAIZHEN 
WU YING 
ANNIE KUMAR 
LI YIDA 
FONG XUANYAO 
THEAN VOON YEW, AARON 
GONG XIAO 
Keywords: IGZO, TFT, subthreshold swing, effective mobility, uniformity
Issue Date: 6-Apr-2020
Publisher: IEEE
Citation: SAMANTA SUBHRANU, UMESH CHAND, XU SHENGQIANG, HAN KAIZHEN, WU YING, ANNIE KUMAR, LI YIDA, FONG XUANYAO, THEAN VOON YEW, AARON, GONG XIAO (2020-04-06). Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity. IEEE Electron Device Letters 41 (6) : 856-859. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2020.2985787
Rights: CC0 1.0 Universal
Abstract: We report high performance amorphous Indium-Gallium-Zinc-Oxide (a -IGZO) thin-film transistors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving subthreshold swing (SS) of 70.2 mV/decade, high effective mobility (μeff ) of 55.3cm 2 /V⋅s at an inversion carrier density (Ninv ) of 5×1012 cm -2 , and large ION/IOFF of >10 9 . Furthermore, very good device-to-device uniformity has been confirmed by the statistical distribution of SS and maximum transconductance (Gm, max) measured from 20 pristine TFT devices. This a -IGZO TFT has immense potential for the ultrafast and low power electronic devices for next-generation cost-effective emissive display, image sensing, and hardware for artificial intelligence (AI).
Source Title: IEEE Electron Device Letters
URI: https://scholarbank.nus.edu.sg/handle/10635/192013
ISSN: 15580563
DOI: 10.1109/LED.2020.2985787
Rights: CC0 1.0 Universal
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