1. ScholarBank@NUS

Han Genquan

rp09719

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Full Name
Han Genquan
(not current staff)
Variants
Han, G.-Q.
Han, G.
 
Main Affiliation
 
Faculty
 
Email
elehg@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2010 TO 2020]
Author:  Yang, Y.
Author:  Guo, P.

Results 21-28 of 28 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
212012Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layerHan, G. ; Su, S.; Wang, L.; Wang, W.; Gong, X.; Yang, Y.; Ivana; Guo, P.; Guo, C.; Zhang, G.; Pan, J.; Zhang, Z.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
222013Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivationWang, L.; Su, S.; Wang, W.; Gong, X.; Yang, Y.; Guo, P.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
232012Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETsWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Liu, B.; Kong, E.Y.-J.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
42012Tin-incorporated source/drain and channel materials for field-effect transistorsYeo, Y.-C. ; Han, G. ; Gong, X.; Wang, L.; Wang, W.; Yang, Y.; Guo, P.; Liu, B.; Su, S.; Zhang, G.; Xue, C.; Cheng, B.
52012Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)Yang, Y.; Su, S.; Guo, P.; Wang, W.; Gong, X.; Wang, L.; Low, K.L.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
62012Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junctionGuo, P.; Yang, Y.; Cheng, Y.; Han, G. ; Chia, C.K.; Yeo, Y.-C. 
77-Mar-2013Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junctionGuo, P.; Yang, Y.; Cheng, Y.; Han, G. ; Pan, J.; Ivana; Zhang, Z.; Hu, H.; Shen, Z.X.; Chia, C.K.; Yeo, Y.-C. 
82013Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technologyGong, X.; Han, G. ; Su, S.; Cheng, R. ; Guo, P.; Bai, F.; Yang, Y.; Zhou, Q. ; Liu, B.; Goh, K.H.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.-C.