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Osipowicz Thomas

rp05639

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Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

Refined By:
Author:  Seng, H.L.

Results 1-16 of 16 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
118-May-2001Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEMHo, Y.W.; Ng, V. ; Choi, W.K. ; Ng, S.P.; Osipowicz, T. ; Seng, H.L. ; Tjui, W.W.; Li, K.
2Apr-2005Determination of local lattice tilt in Si1-xGex virtual substrate using high resolution channeling contrast microscopySeng, H.L. ; Osipowicz, T. ; Zhang, J.; Tok, E.S. ; Watt, F. 
315-Dec-2001Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxideLatt, K.M.; Lee, Y.K.; Seng, H.L. ; Osipowicz, T. 
47-Mar-2002Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structureLatt, K.M.; Park, H.S.; Seng, H.L. ; Osipowicz, T. ; Lee, Y.K.; Li, S.
5May-2002High resolution channeling contrast microscopy and channeling analysis of SiGe quantum well structuresOsipowicz, T. ; Seng, H.L. ; Wielunski, L.S.; Tok, E.S. ; Breton, G.; Zhang, J.
6Sep-2003High-resolution channeling contrast microscopy of compositionally graded Si1-XGeX layersSeng, H.L. ; Osipowicz, T. ; Sum, T.C. ; Breese, M.B.H. ; Watt, F. ; Tok, E.S. ; Zhang, J.
76-Nov-2000Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Lu, Y.F. ; Wee, A.T.S. ; Osipowicz, T. ; Seng, H.L. ; See, A.; Dai, J.-Y.
8Jul-2001Micro-RBS study of nickel silicide formationSeng, H.L. ; Osipowicz, T. ; Lee, P.S.; Mangelinck, D.; Sum, T.C. ; Watt, F. 
9Nov-2005Observation of local lattice tilts in strain-relaxed Si 1-xGex using high resolution channeling contrast microscopySeng, H.L. ; Osipowicz, T. ; Zhang, J.; Tok, E.S. 
1022-Apr-2002Probing the SiGe virtual substrate by high-resolution channeling contrast microscopySeng, H.L. ; Osipowicz, T. ; Sum, T.C. ; Tok, E.S. ; Breton, G.; Woods, N.J.; Zhang, J.
11Nov-2001Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin filmsNatarajan, A.; Bera, L.K. ; Choi, W.K. ; Osipowicz, T. ; Seng, H.L. 
121-Oct-2002Study on SiNx passivated Cu/Ta/SiO2/Si multilayer structureLatt, K.M.; Park, H.S.; Seng, H.L. ; Osipowicz, T. ; Lee, Y.K.
132006The CIBA high resolution RBS facilityOsipowicz, T. ; Seng, H.L. ; Chan, T.K.; Ho, B. 
14Aug-2006The CIBA high resolution RBS facilityOsipowicz, T. ; Seng, H.L. ; Chan, T.K. ; Ho, B.
1520-Jul-2001The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structureLatt, K.M.; Lee, Y.K.; Li, S.; Osipowicz, T. ; Seng, H.L. 
16Dec-2003Via resistance reduction using "cool" PVD-Ta processingSeet, C.S.; Zhang, B.C.; Yong, C.; Liew, S.L.; Li, K.; Hsia, L.C.; Seng, H.L. ; Osiposwicz, T. ; Sudijono, J.; Zeng, H.C. ; Tan, J.B.