1. ScholarBank@NUS

Tan Leng Seow

rp05052

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
Main Affiliation
 
Faculty
 
Email
sletanls@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Date Issued:  [2000 TO 2021]
Department:  COLLEGE OF DESIGN AND ENGINEERING
Type:  Conference Paper

Results 1-7 of 7 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12008A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stackChin, H.-C.; Zhu, M. ; Lee, Z.-C.; Liu, X.; Tan, K.-M.; Lee, H.K.; Shi, L. ; Tang, L.-J.; Tung, C.-H. ; Lo, G.-Q.; Tan, L.-S. ; Yeo, Y.-C. 
2Apr-2013AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free processLiu, X.; Zhan, C.; Wai Chan, K.; Samuel Owen, M.H.; Liu, W.; Chi, D.Z.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
32012AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Teo, K.L. ; Chen, K.J.; Yeo, Y.-C. 
42010Diamond-like carbon (DLC) liner with highly compressive stress formed on algan/gan mos-hemts with in situ silane surface passivation for performance enhancementLiu, X.; Liu, B.; Low, E.K.F.; Chin, H.-C.; Liu, W.; Yang, M.; Tan, L.S. ; Yeo, Y.-C. 
52009Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contactsChin, H.-C.; Liu, X.; Tan, L.-S. ; Yeo, Y.-C. 
62008Laser precision engineering from microfabrication to nanoprocessingHong, M.H. ; Huang, Z.Q.; Lin, Y. ; Yun, J.; Tan, L.S. ; Shian, L.; Chong, T.C. 
7Aug-2010Pulsed laser annealing of ultra-shallow junctions in silicon-germaniumTan, L.S. ; Tan, J.Y.; Begum, A.; Hong, M.H. ; Du, A.Y.; Bhat, M.; Wang, X.C.