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|Title:||Pulsed laser annealing of ultra-shallow junctions in silicon-germanium||Authors:||Tan, L.S.
Pulsed laser annealing
|Issue Date:||Aug-2010||Citation:||Tan, L.S., Tan, J.Y., Begum, A., Hong, M.H., Du, A.Y., Bhat, M., Wang, X.C. (2010-08). Pulsed laser annealing of ultra-shallow junctions in silicon-germanium. International Journal of Nanoscience 9 (4) : 341-344. ScholarBank@NUS Repository. https://doi.org/10.1142/S0219581X10006922||Abstract:||The effect of laser energy fluence and substrate heating on the annealing of boron-implanted silicongermanium epitaxial layers on silicon was investigated. By making use of the difference in the melting points of silicongermanium and silicon, a process window in the laser energy fluence can be found such that the meltdepth was confined within the silicongermanium. Pre-heating of the substrate to 300°C was done to reduce the laser fluence required and improve the surface morphology. Cross-sectional transmission electron microscopy showed that there were no end-of-range defects due to ion implantation at the silicongermanium/silicon interface after the laser annealing. © 2010 World Scientific Publishing Company.||Source Title:||International Journal of Nanoscience||URI:||http://scholarbank.nus.edu.sg/handle/10635/71526||ISSN:||0219581X||DOI:||10.1142/S0219581X10006922|
|Appears in Collections:||Staff Publications|
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