Kwong,Dim-Lee

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Full Name

Kwong,Dim-Lee

(not current staff)

Variants

Kwong, D.L.
Lee, K.D.
Kwong, D.-L.
KWONG DIM-LEE

Main Affiliation

ELECTRICAL AND COMPUTER ENGINEERING

Faculty

FAC OF ENGINEERING

elekdl@nus.edu.sg

Refined By:

Author: Kwong, D.-L.

Author: Yeo, Y.-C.

Results 1-5 of 5 (Search time: 0.002 seconds).

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	Issue Date	Title	Author(s)
1	25-Apr-2008	Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction	Lim, A.E.-J.; Lee, R.T.P. ; Koh, A.T.Y.; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C.
2	2007	Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers	Lim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G. ; Kwong, D.-L. ; Yeo, Y.-C.
3	2007	Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers	Lim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C.
4	2005	New insights in hf based high-k gate dielectrics in mosfets	Li, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L.
5	Nov-2007	Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices	Wang, X.P.; Lim, A.E.-J.; Yu, H.Y.; Li, M.-F. ; Ren, C.; Loh, W.-Y.; Zhu, C.X. ; Chin, A. ; Trigg, A.D.; Yeo, Y.-C. ; Biesemans, S.; Lo, G.-Q.; Kwong, D.-L.