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Karunasiri,Gamani

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Full Name
Karunasiri,Gamani
Variants
Karunasiri, G.
Karunasiri, R.P.G.
KARUNASIRI, GAMANI
Karunasirf, R.P.G.
KARUNASIRI, R.P.G.
Karunasiri, Gamani
Gamani Karunasiri, R.P.
KARUNASIRI, R. P. G.
Gamani, K.
 
Main Affiliation
 
Faculty
 

Publications

Results 1-20 of 29 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Jan-1999Carbon nitride thin films deposited by nitrogen-ion-assisted KRF excimer ablation of graphiteFeng, L.Y. ; Min, R.Z.; Qiao, N.H.; Feng, H.Z.; Chan, D.S.H. ; Seng, L.T. ; Yin, C.S.; Gamani, K. ; Geng, C. ; Kun, L.
21998Characteristics of InGaAs quantum dot infrared photodetectorsXu, S.J. ; Chua, S.J. ; Mei, T.; Wang, X.C.; Zhang, X.H.; Karunasiri, G. ; Fan, W.J.; Wang, C.H.; Jiang, J.; Wang, S.; Xie, X.G.
31-Aug-1998Characterization of titanium silicide by Raman spectroscopy for submicron IC processingLim, E.H.; Karunasiri, G. ; Chua, S.J. ; Shen, Z.X. ; Wong, H.; Pey, K.L.; Lee, K.H.; Chan, L.
423-Nov-2000Circuit for microbolometer bias-heating cancellationXu, Y.P. ; Qian, X.B. ; Karunasiri, G. 
5Apr-2000Circuit model for quantum-well infrared photodetectors and its comparison with experimentsChee, Y.H.; Karunasiri, G. 
61998Determination of thermal parameters of microbolometers using a single electrical measurementGu, X.; Karunasiri, G. ; Chen, G. ; Sridhar, U.; Xu, B.
7Dec-1995Doping dependence of intersubband transitions in Si1-xGex Si multiple quantum wellsKarunasiri, G. ; Jin Chua, S. ; Suk Park, J.; Wang, K.L.
82003Effect of operating temperature on electrical and thermal properties of microbolometer infrared sensorsKarunasiri, G. ; Ramakrishna, M.V.S.; Neuzil, P.
930-Nov-1996Effect of presence and type of particulate reinforcement on the electrical conductivity of non-heat treatable aluminumGupta, M. ; Karunasiri, G. ; Lai, M.O. 
101998Effects of changing Al mole fraction on the performance of an InGaAlAs/InP DBRTDLim, C.H.; Chua, S.J. ; Karunasiri, G. 
112001Effects of hydrostatic pressure on Raman scattering in Ge quantum dotsTeo, K.L. ; Qin, L.; Noordin, I.M.; Karunasiri, G. ; Shen, Z.X. ; Schmidt, O.G.; Eberl, K.; Queisser, H.J.
121999Electro-thermal modelling of infrared microemitters using PSPICERavi Kiran, S.; Karunasiri, G. 
132-Nov-1995Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxyRamam, A. ; Chua, S.J. ; Karunasiri, G. ; Vaya, P.R. 
141-Feb-2000Highly sensitive infrared temperature sensor using self-heating compensated microbolometersRamakrishna, M.V.S.; Karunasiri, G. ; Neuzil, P.; Sridhar, U.; Zeng, W.J.
151-Feb-2000Highly sensitive infrared temperature sensor using self-heating compensated microbolometersRamakrishna, M.V.S.; Karunasiri, G. ; Neuzil, P.; Sridhar, U.; Zeng, W.J.
1627-Feb-1998Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formationHo, C.S.; Pey, K.L.; Wong, H.; Karunasiri, R.P.G. ; Chua, S.J. ; Lee, K.H.; Chan, L.H.
171999Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectorsLee, A.S.W.; Li, E.H.; Karunasiri, G. 
182001Measurement of the excited-state position of bound-to-bound quantum-well infrared detectorsZhou, L.; Chee, Y.H. ; Karunasiri, G. 
19May-1998Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopyLim, E.H.; Karunasiri, G. ; Chua, S.J. ; Wong, H.; Pey, K.L.; Lee, K.H.
2030-Jun-1998On-chip compensation of self-heating effects in microbolometer infrared detector arraysGu, X.; Karunasiri, G. ; Yu, J.; Chen, G. ; Sridhar, U.; Zeng, W.J.