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|Title:||Effects of hydrostatic pressure on Raman scattering in Ge quantum dots||Authors:||Teo, K.L.
|Issue Date:||2001||Citation:||Teo, K.L.,Qin, L.,Noordin, I.M.,Karunasiri, G.,Shen, Z.X.,Schmidt, O.G.,Eberl, K.,Queisser, H.J. (2001). Effects of hydrostatic pressure on Raman scattering in Ge quantum dots. Physical Review B - Condensed Matter and Materials Physics 63 (12) : 1213061-1213064. ScholarBank@NUS Repository.||Abstract:||Raman scattering under hydrostatic pressure is used to investigate the phonon modes of self-organized Ge quantum dots (QD's) grown by solid source molecular-beam epitaxy. The pressure dependence of Ge-Ge phonon and Si acoustical-overtone (2TA) modes are studied from 0 to 67 kbar at room temperature. Our results show that the overlapping spectra of the Ge-Ge phonon and Si 2TA modes occur around 303 cm-1 at ambient pressure which can be resolved at relatively low pressure of about 3 kbar. The linear pressure coefficient of Ge-Ge phonon mode in QD's is found to be 0.29 cm-1/kbar, which is slightly smaller than the corresponding quantity in bulk Ge.||Source Title:||Physical Review B - Condensed Matter and Materials Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/80375||ISSN:||01631829|
|Appears in Collections:||Staff Publications|
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