Characteristics of InGaAs quantum dot infrared photodetectors

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122703

Title:	Characteristics of InGaAs quantum dot infrared photodetectors
Authors:	Xu, S.J. Chua, S.J. Mei, T. Wang, X.C. Zhang, X.H. Karunasiri, G. Fan, W.J. Wang, C.H. Jiang, J. Wang, S. Xie, X.G.
Issue Date:	1998
Citation:	Xu, S.J., Chua, S.J., Mei, T., Wang, X.C., Zhang, X.H., Karunasiri, G., Fan, W.J., Wang, C.H., Jiang, J., Wang, S., Xie, X.G. (1998). Characteristics of InGaAs quantum dot infrared photodetectors. Applied Physics Letters 73 (21) : 3153-3155. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122703
Abstract:	A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength. © 1998 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/61926
ISSN:	00036951
DOI:	10.1063/1.122703
Appears in Collections:	Staff Publications

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