Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122703
Title: Characteristics of InGaAs quantum dot infrared photodetectors
Authors: Xu, S.J. 
Chua, S.J. 
Mei, T.
Wang, X.C.
Zhang, X.H.
Karunasiri, G. 
Fan, W.J.
Wang, C.H.
Jiang, J.
Wang, S.
Xie, X.G.
Issue Date: 1998
Citation: Xu, S.J., Chua, S.J., Mei, T., Wang, X.C., Zhang, X.H., Karunasiri, G., Fan, W.J., Wang, C.H., Jiang, J., Wang, S., Xie, X.G. (1998). Characteristics of InGaAs quantum dot infrared photodetectors. Applied Physics Letters 73 (21) : 3153-3155. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122703
Abstract: A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength. © 1998 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/61926
ISSN: 00036951
DOI: 10.1063/1.122703
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

155
checked on Feb 19, 2020

WEB OF SCIENCETM
Citations

143
checked on Feb 19, 2020

Page view(s)

114
checked on Feb 18, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.