Please use this identifier to cite or link to this item:
Title: Doping dependence of intersubband transitions in Si1-xGex Si multiple quantum wells
Authors: Karunasiri, G. 
Jin Chua, S. 
Suk Park, J.
Wang, K.L.
Keywords: Doping effects
Epitaxial silicon
Infrared spectroscopy
Quantum well
Issue Date: Dec-1995
Citation: Karunasiri, G.,Jin Chua, S.,Suk Park, J.,Wang, K.L. (1995-12). Doping dependence of intersubband transitions in Si1-xGex Si multiple quantum wells. Materials Science and Engineering B 35 (1-3) : 463-466. ScholarBank@NUS Repository.
Abstract: Effect of doping on the intersubband transition of p-type SiGe Si multiple quantum wells has been studied. Three Si0.6Ge0.4 Si multiple quantum well structures (10 periods each) with doping concentrations from 1 × 1019 cm-3 to 4 × 1020 cm-3 grown by Si molecular beam epitaxy were used in the experiment. It was found that as the doping in the quantum well is increased the peak position of the transition moves to a higher energy. This behavior is due to the formation of δ-like potential well inside the quantum well and the collective nature of the intersubband transitions. In orther to assess the experimental data, transition energies for different doping concentrations are calculated using a self-consistent scheme. The experimental data are in good agreement with the calculation if the many-body effects are incorporated. This work demonstrates the importance of doping effects in the design of quantum well IR detectors. © 1995.
Source Title: Materials Science and Engineering B
ISSN: 09215107
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jun 14, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.