Full Name
Lee Sungjoo
(not current staff)
Variants
Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.
 
 
 
Email
elelsj@nus.edu.sg
 

Refined By:
Date Issued:  2006

Results 1-13 of 13 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12006100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approachGao, F.; Balakumar, S.; Rui, L.; Lee, S.J. ; Tung, C.-H.; Du, A.; Sudhiranjan, T.; Hwang, W.S.; Balasubramanian, N.; Lo, P.; Dong-Zhi, C.; Kwong, D.-L.
22006Chemically assisted formation of nanocrystals for micro-electronics applicationTan, Z.; Gupta, R.; Samanta, S.K. ; Lee, S. ; Won, J.Y. 
32006Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge (001) Schottky contactsYao, H.B.; Chi, D.Z.; Li, R.; Lee, S.J. ; Kwong, D.-L.
42006Fabrication of high Ge content SiGe layer on Si by Ge condensation techniqueBalakumar, S.; Jun Wei, T.; Tung, C.H.; Lo, G.Q.; Nguyen, H.S.; Fong, C.S.; Agarwal, A.; Kumar, R.; Balasubramanian, N.; Lee, S.J. ; Kwong, D.L.
52006GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stackGao, F.; Lee, S.J. ; Li, R.; Whang, S.J. ; Balakumar, S.; Chi, D.Z.; Kean, C.C.; Vicknesh, S.; Tung, C.H.; Kwong, D.-L.
610-May-2006Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structureGao, F.; Lee, S.J. ; Balakumar, S.; Du, A.; Foo, Y.-L.; Kwong, D.-L.
72006Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistorsYao, H.B.; Tan, C.C.; Liew, S.L.; Chua, C.T.; Chua, C.K.; Li, R.; Lee, R.T.P. ; Lee, S.J. ; Chi, D.Z.
810-May-2006Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technologyLi, R.; Yao, H.B.; Lee, S.J. ; Chi, D.Z.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.
9Jun-2006Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrodeLi, R.; Lee, S.J. ; Yao, H.B.; Chi, D.Z.; Yu, M.B.; Kwong, D.L.
102006Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrodeGao, F.; Li, R.; Chi, D.Z.; Balakumar, S.; Tung, C.-H.; Lee, S.J. 
112006Schottky source/drain transistor on thin SiGe on insulator integrated with HfO2/TaN gate stackGao, F.; Lee, S.J. ; Li, R.; Balakumar, S.; Tung, C.-H.; Chi, D.-Z.; Kwong, D.-L.
12Jul-2006SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stackGao, F.; Lee, S.J. ; Rui, L.; Wang, S.J. ; Cho, B.J. ; Balakumar, S.; Tung, C.-H.; Chi, D.Z.; Kwong, D.L.
132006Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrateBalakumar, S.; Tung, C.H.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.L.; Fei, G.; Lee, S.J.