Full Name
Radhakrishnan, M K
Radhakrishnan, M.K.


Results 1-12 of 12 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
12004A new breakdown failure mechanism in HfO 2 gate dielectricRanjan, R.; Pey, K.L.; Tang, L.J.; Tung, C.H.; Groeseneken, G.; Radhakrishnan, M.K. ; Kaczer, B.; Degraeve, R.; De Gendt, S.
2Sep-2003Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEMPey, K.L.; Tung, C.H.; Radhakrishnan, M.K. ; Tang, L.J.; Sun, Y.; Wang, X.D.; Lin, W.H.
32004Device reliability and failure mechanisms related to gate dielectrics and interconnectsRadhakrishnan, M.K. 
4Mar-1997Die attach failures related to wafer back metal processing - An AES studyRadhakrishnan, M.K. 
5Mar-2004Expanded Papers From the 2003 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)Pey, K.L.; Radhakrishnan, M.K. ; Trigg, A.
62004Gate dielectric degradation mechanism associated with DBIE evolutionPey, K.L.; Ranjan, R.; Tung, C.H.; Tang, L.J.; Lin, W.H.; Radhakrishnan, M.K. 
7Mar-2004Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETsTang, L.J.; Pey, K.L.; Tung, C.H.; Radhakrishnan, M.K. ; Lin, W.H.
82004Geometry dependence of gate oxide breakdown evolutionSun, Y.; Pey, K.L.; Tung, C.H.; Lombardo, S.; Palumbo, F.; Tang, L.J.; Radhakrishnan, M.K. 
92002Physical analysis of Ti-migration in 33 Å gate oxide breakdownPey, K.L. ; Tung, C.H. ; Lin, W.H.; Radhakrishnan, M.K. 
106-Oct-2003Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistorsPey, K.L.; Tung, C.H.; Tang, L.J.; Lin, W.H.; Radhakrishnan, M.K. 
112004Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopyPey, K.L.; Tung, C.H.; Tang, L.J.; Ranjan, R.; Radhakrishnan, M.K. ; Lin, W.H.; Lombardo, S.; Palumbo, F.
122004Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxidesPalumbo, F.; Lombardo, S.; Pey, K.L.; Tang, L.J.; Tung, C.H.; Lin, W.H.; Radhakrishnan, M.K. ; Falci, G.