Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/115429
Title: Gate dielectric degradation mechanism associated with DBIE evolution
Authors: Pey, K.L.
Ranjan, R.
Tung, C.H.
Tang, L.J.
Lin, W.H.
Radhakrishnan, M.K. 
Keywords: Breakdown
Dielectric-breakdown-induced epitaxy
Gate dielectric
Issue Date: 2004
Citation: Pey, K.L.,Ranjan, R.,Tung, C.H.,Tang, L.J.,Lin, W.H.,Radhakrishnan, M.K. (2004). Gate dielectric degradation mechanism associated with DBIE evolution. Annual Proceedings - Reliability Physics (Symposium) : 117-121. ScholarBank@NUS Repository.
Abstract: The degradation mechanism of breakdown spots in ultrathin gate dielectrics metal-oxide-semiconductor transistor associated with dielectric-breakdown- induced epitaxy (DBIE) evolution is physically analyzed using high resolution transmission electron microscope (HRTEM). The initial soft breakdown location triggered by percolation path happens randomly along the transistor channel, and then evolves to the formation of DBIE in the vicinity of the percolation path. If the breakdown leakage current is not limited, DBIE will grow and the effective breakdown location will successively shift to either source or drain of the transistor channel. For most of the hard breakdown events studied, DBIE eventually shorts the gate electrode to either source or drain region, leading to a typical one-sided hard breakdown seen electrically, which confirms by HRTEM images.
Source Title: Annual Proceedings - Reliability Physics (Symposium)
URI: http://scholarbank.nus.edu.sg/handle/10635/115429
ISSN: 00999512
Appears in Collections:Staff Publications

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