Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0026-2714(03)00261-0
Title: Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM
Authors: Pey, K.L.
Tung, C.H.
Radhakrishnan, M.K. 
Tang, L.J.
Sun, Y.
Wang, X.D.
Lin, W.H.
Issue Date: Sep-2003
Citation: Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Tang, L.J., Sun, Y., Wang, X.D., Lin, W.H. (2003-09). Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. Microelectronics Reliability 43 (9-11) : 1471-1476. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2714(03)00261-0
Abstract: Gate oxide breakdowns in narrow nMOSFETs induced by highly accelerated constant current stress in inversion mode were physically analyzed using high resolution transmission electron microscopy. The physical analysis results show that "dielectric-breakdown-induced-epitaxy"-like microstructures and Si-bumps were found on the cathode side for various levels of gate oxide breakdown hardness. The results further support that similar failure mechanisms in constant-voltage-stress gate oxide breakdowns are responsible for the breakdowns found in constant-current-stress ultrathin gate dielectrics. © 2003 Elsevier Ltd. All rights reserved.
Source Title: Microelectronics Reliability
URI: http://scholarbank.nus.edu.sg/handle/10635/112974
ISSN: 00262714
DOI: 10.1016/S0026-2714(03)00261-0
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