Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

Abstract

Size-difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors (MOSFET) was discussed. It was found that physical dimensions formed during gate-dielectrics-breakdown-induced epitaxy (DBIE) is dependent on transistor type. Results also showed that DBIE in n-MOSFET are almost 2 times larger than in the p-MOSFET.