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https://doi.org/10.1063/1.1616195
Title: | Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors | Authors: | Pey, K.L. Tung, C.H. Tang, L.J. Lin, W.H. Radhakrishnan, M.K. |
Issue Date: | 6-Oct-2003 | Citation: | Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K. (2003-10-06). Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors. Applied Physics Letters 83 (14) : 2940-2942. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1616195 | Abstract: | Size-difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors (MOSFET) was discussed. It was found that physical dimensions formed during gate-dielectrics-breakdown-induced epitaxy (DBIE) is dependent on transistor type. Results also showed that DBIE in n-MOSFET are almost 2 times larger than in the p-MOSFET. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/115288 | ISSN: | 00036951 | DOI: | 10.1063/1.1616195 |
Appears in Collections: | Staff Publications |
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