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|Title:||Device reliability and failure mechanisms related to gate dielectrics and interconnects||Authors:||Radhakrishnan, M.K.||Issue Date:||2004||Citation:||Radhakrishnan, M.K. (2004). Device reliability and failure mechanisms related to gate dielectrics and interconnects. Proceedings of the IEEE International Conference on VLSI Design 17 : 805-808. ScholarBank@NUS Repository.||Abstract:||As dimensions shrink, the reliability considerations become more trivial. In deep sub-micron devices, at certain stages of processing, even an atomic layer variation can be a defect. Studies on the physical failure mechanisms in sub-micron devices reveals that the major reliability concerns are the same as that poses before scaling. A comprehensive overview on the reliability issues in ultra thin gate dielectrics and copper interconnect material is given to link how the physical effects on devices can be a threat to long-term reliability.||Source Title:||Proceedings of the IEEE International Conference on VLSI Design||URI:||http://scholarbank.nus.edu.sg/handle/10635/116064||ISSN:||10639667|
|Appears in Collections:||Staff Publications|
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