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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Date Issued:  2009

Results 1-15 of 15 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12009A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FETShen, C.; Yang, L.T.; Toh, E.-H.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
22009Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM techniqueZhao, H.; Kim, R.; Paul, A.; Luisier, M.; Klimeck, G.; Ma, F.-J. ; Rustagi, S.C.; Samudra, G.S. ; Singh, N.; Lo, G.-Q.; Kwong, D.-L.
32009Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulationsZhao, H.; Rustagi, S.C.; Ma, F.-J. ; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
42009Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drainWong, H.-S.; Ang, K.-W.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
52009Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostuctureWong, H.-S.; Tan, L.-H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
62009Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channelsMa, F.-J. ; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Budhaaraju, K.D.; Lo, G.Q.; Kwong, D.L.
72009Partial SOI superjunction power LDMOS for PIC applicationChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Buddharaju, K.D.; Feng, H.
8Oct-2009Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drainWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
92009Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisonsChin, S.K.; Ligatchev, V.; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
102009Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisonsChin, S.K.; Ligatchev, V.; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
112009Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETsKoh, S.-M.; Wang, X.; Sekar, K.; Krull, W.; Samudra, G.S. ; Yeo, Y.-C. 
122009Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakageKoh, S.-M.; Zhou, W.J.; Lee, R.T.P. ; Sinha, M.; Ng, C.-M.; Zhao, Z.; Maynard, H.; Variam, N.; Erokhin, Y.; Samudra, G. ; Yeo, Y.-C. 
13Dec-2009SPICE behavioral model of the tunneling field-effect transistor for circuit simulationHong, Y.; Yang, Y.; Yang, L.; Samudra, G. ; Heng, C.-H. ; Yeo, Y.-C. 
142009Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drainKoh, S.-M.; Sinha, M.; Tong, Y.; Chin, H.-C.; Fang, W.-W.; Zhang, X.; Ng, C.-M.; Samudra, G. ; Yeo, Y.-C. 
152009Tunneling field-effect transistor: Effect of strain and temperature on tunneling currentGuo, P.-F.; Yang, L.-T.; Yang, Y.; Fan, L.; Han, G.-Q. ; Samudra, G.S. ; Yeo, Y.-C.