Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
 
 
Email
eleshanr@nus.edu.sg
 

Refined By:
Author:  Samudra, G.
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Department:  ELECTRICAL ENGINEERING

Results 1-20 of 36 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1Oct-2000120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limitXu, S.; Gan, K.P.; Samudra, G.S. ; Liang, Y.C.; Sin, J.K.O.
2Aug-1997A new modeling technique for mixed-mode simulation of CMOS circuitsSamudra, G. ; Lee, T.K.
31999An accurate delay model for BiCMOS logic gatesSamudra, G. ; Zhao, B.
41992CAD/CAE in semiconductor fabrication: An integrated approachArora, V.K. ; Samudra, G. 
5May-2000Comparative analysis of minimum surface potential and location of barrier peaks in various Si MOSFET devicesSamudra, G. ; Rajendran, K.
61998Design of integrated current sensor for lateral IGBT power devicesLiang, Y.C. ; Samudra, G.S. ; Hor, V.S.S.
7May-1996Determination of LDD MOSFET drain resistance from device simulationSamudra, G.S. ; Seah, B.P.; Ling, C.H. 
82000Global optimization for digital MOS circuits performanceChen, H.M.; Samudra, G.S. ; Chan, D.S.H. ; Ibrahim, Y. 
91992High-field electron transport for ellipsoidal multivalley band structure of siliconSamudra, G. ; Chua, S.J. ; Ghatak, A.K.; Arora, V.K. 
101992High-field electron transport for ellipsoidal multivalley band structure of siliconSamudra, G. ; Chua, S.J. ; Ghatak, A.K.; Arora, V.K. 
112003Investigation of Performance Limits of Germanium Double-Gated MOSFETsLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L.
12May-1995Measurement and simulation of hot carrier degradation in PMOSFET by gate capacitanceLing, C.H. ; Seah, B.P.; Samudra, Ganesh S. ; Gan, Chock H.
132000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
142000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
15Feb-2000Modelling of transconductance-to-current ratio (gm/ID) analysis on double-gate SOI MOSFETsRajendran, K. ; Samudra, G.S. 
161-Feb-1996MOS device conductance modelling technique for an accurate and efficient mixed-mode simulation of CMOS circuitsSamudra, G. ; Lee, T.K.
171-Feb-1996MOS device conductance modelling technique for an accurate and efficient mixed-mode simulation of CMOS circuitsSamudra, G. ; Lee, T.K.
181994New clustering method based on general connectivityZhuang, Wenjun ; Ching Lim, Yong ; Samudra, Ganesh ; Yan, Neng
191994Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layersTan, Leng Seow ; Lau, Wai Shing ; Samudra, Ganesh Shankar ; Lee, Kin Man; Ang, Boon Yong
201994Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layersTan, Leng Seow ; Lau, Wai Shing ; Samudra, Ganesh Shankar ; Lee, Kin Man; Ang, Boon Yong