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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Author:  Samudra, G.

Results 41-60 of 200 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
4125-Apr-2008Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium sourceToh, E.-H.; Wang, G.H.; Chan, L.; Sylvester, D.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
422007Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimizationToh, E.-H.; Wang, G.H.; Samudra, G. ; Yeo, Y.-C. 
432008Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applicationsToh, E.-H.; Wang, G.H.; Samudra, G. ; Yeo, Y.-C. 
442007Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunctionToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
4525-Apr-2008Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication processToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G.S. ; Yeo, Y.-C. 
46Feb-2006Direct extraction of substrate network parameters for RF MOSFET modeling using a simple test structureMahalingam, U.; Rustagi, S.C.; Samudra, G.S. 
47Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
48Dec-2007Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contactsWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
4925-Apr-2008Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reductionLim, A.E.-J.; Lee, R.T.P. ; Koh, A.T.Y.; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
50Oct-2007Electrical characteristics of memory devices with a high-k HfO2 trapping layer and dual SiO2/Si3 N4 tunneling layerWang, Y.Q.; Hwang, W.S.; Zhang, G.; Samudra, G. ; Yeo, Y.-C. ; Yoo, W.J.
512007Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressorsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
522004Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regionsAng, K.W.; Chui, K.J.; Bliznetsov, V.; Du, A.; Balasubramanian, N.; Li, M.F. ; Samudra, G. ; Yeo, Y.-C. 
532007Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)Ang, K.-W.; Wong, H.-S.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C. 
54Apr-2007Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress linerAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
552005Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystalsSamanta, S.K. ; Singh, P.K.; Yoo, W.J. ; Samudra, G. ; Yeo, Y.-C. ; Bera, L.K.; Balasubramanian, N.
562008Epitaxial growth of single crystalline Ge films on GaAs substrates for CMOS device integrationChin, H.-C.; Zhu, M. ; Samudra, G. ; Yeo, Y.-C. 
572003Extending a GTD-based image formation technique to EUV lithographyKhoh, A.; Flagello, D.; Milster, T.; Choi, B.-I.; Samudra, G.S. ; Wu, Y. 
582008Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n -channel metal-oxide-semiconductor field effect transistor applicationsZhu, M. ; Chin, H.-C.; Samudra, G.S. ; Yeo, Y.-C. 
592008Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor depositionZhu, M. ; Chin, H.-C.; Samudra, G.S. ; Yeo, Y.-C. 
602007Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Tung, C.-H.; Foo, Y.-L.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C.