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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Author:  Samudra, G.
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Date Issued:  [2010 TO 2015]
Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 1-20 of 34 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12010A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineeringLam, K.-T.; Da, H. ; Chin, S.-K.; Samudra, G. ; Yeo, Y.-C. ; Liang, G. 
2Mar-2011A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FETShen, C.; Yang, L.-T.; Samudra, G. ; Yeo, Y.-C. 
3Jun-2010A simulation study of graphene-nanoribbon tunneling FET with heterojunction channelLam, K.-T.; Seah, D.; Chin, S.-K.; Bala Kumar, S. ; Samudra, G. ; Yeo, Y.-C. ; Liang, G. 
42010A smart-power synchronous rectifier by CMOS processLim, C.Y.; Liang, Y.C. ; Samudra, G.S. ; Balasubramanian, N.
52013AlGaN/GaN power HEMT devices for future energy conversion applicationsLiang, Y.C. ; Samudra, G.S. ; Huang, H.; Huang, C.-F.; Chang, T.-F.
62013Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devicesWang, Y.-H.; Liang, Y.C. ; Samudra, G.S. ; Chang, T.-F.; Huang, C.-F.; Yuan, L.; Lo, G.-Q.
72014Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structuresHuang, H.; Liang, Y.C. ; Samudra, G.S. ; Ngo, C.L.L.
82010Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boostKoh, S.-M.; Zhang, P.; Ren, S.-F.; Ng, C.-M.; Samudra, G.S. ; Yeo, Y.-C. 
919-Jul-2010Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressorsKoh, S.-M.; Samudra, G.S. ; Yeo, Y.-C. 
10Apr-2012Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregationKoh, S.-M.; Samudra, G.S. ; Yeo, Y.-C. 
11Nov-2011Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregationKoh, S.-M.; Kong, E.Y.-J.; Liu, B.; Ng, C.-M.; Samudra, G.S. ; Yeo, Y.-C. 
122013Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structuresHuang, H.; Liang, Y.C. ; Samudra, G.S. ; Huang, C.-F.
13Nov-2010Device physics and characteristics of graphene nanoribbon tunneling FETsChin, S.-K.; Seah, D.; Lam, K.-T.; Samudra, G.S. ; Liang, G. 
14May-2014Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTsHuang, H.; Liang, Y.C. ; Samudra, G.S. ; Chang, T.-F.; Huang, C.-F.
15Apr-2011Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbonLam, K.-T.; Yang, Y.; Samudra, G.S. ; Yeo, Y.-C. ; Liang, G. 
16May-2012Graphene nanoribbon tunneling field-effect transistors with a semiconducting and a semimetallic heterojunction channelDa, H. ; Lam, K.-T.; Samudra, G. ; Chin, S.-K.; Liang, G. 
17Nov-2012Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistorsDa, H. ; Lam, K.-T.; Samudra, G.S. ; Liang, G. ; Chin, S.-K.
182013Influences of gate drive on pulsed current collapse recovery in AlGaN/GaN power HEMTsLi, Y.; Liang, Y.C. ; Samudra, G.S. ; Huang, H.; Yeo, Y.-C. 
192013Modelling of temperature dependence on current collapse phenomenon in AlGaN/GaN HEMT devicesSamudra, G.S. ; Liang, Y.C. ; Li, Y.; Yeo, Y.-C. 
20Dec-2013Modelling temperature dependence on AlGaN/GaN power HEMT device characteristicsWang, Y.-H.; Liang, Y.C. ; Samudra, G.S. ; Chang, T.-F.; Huang, C.-F.; Yuan, L.; Lo, G.-Q.