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|Title:||Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures||Authors:||Huang, H.
|Issue Date:||2014||Citation:||Huang, H., Liang, Y.C., Samudra, G.S., Ngo, C.L.L. (2014). Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures. IEEE Electron Device Letters 35 (5) : 569-571. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2014.2310851||Abstract:||In this letter, partially recessed gate structures in conjunction with negative trap charges by F- plasma treatments both at AlGaN barrier and on gate dielectric surface are employed to realize the normally-OFF operation for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors in Au-free scheme. A partial gate recessed trench is designed to effectively reduce the 2-D electron gas (2DEG) density and achieve positive threshold voltage Vth without severe degradation in 2-DEG channel mobility. Furthermore, the fixed trap charges are innovatively placed at the gate AlGaN and Si3N4 layers by a two-stage F- plasma treatment to further increase the Vth , without mobility degradation. A high Vth of 1.9 V and a drain current ∼200~mA/mm are achieved in the fabricated device, which also has a lower leakage current and the higher breakdown voltage of 580 V. © 2014 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81993||ISSN:||07413106||DOI:||10.1109/LED.2014.2310851|
|Appears in Collections:||Staff Publications|
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