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|Title:||Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices||Authors:||Wang, Y.-H.
high temperature effects
wide bandgap devices
|Issue Date:||2013||Citation:||Wang, Y.-H.,Liang, Y.C.,Samudra, G.S.,Chang, T.-F.,Huang, C.-F.,Yuan, L.,Lo, G.-Q. (2013). Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices. 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013 : 379-384. ScholarBank@NUS Repository. https://doi.org/10.1109/ECCE-Asia.2013.6579124||Abstract:||This paper reports analytical modelling and analysis of the temperature dependence on the device characteristics of the AlGaN/GaN high electron mobility transistors (HEMTs). A physics-based model is proposed in this study in order to correctly predict the gate Schottky barrier height (ΦB), Fermi-level from conduction band energy (EC-EF), two-dimensional electron gas (2DEG) sheet density, gate threshold (V th) and sub-threshold voltages (ID-VG), and drain current-voltage (ID-VD) characteristics under various high temperature (300K∼500K) conditions. The analytical results are then verified by comparing with the laboratory measurement as well as the numerical results obtained from the Sentaurus TCAD simulation. The proposed model is found to be useful for power electronic device designers on the prediction of the AlGaN/GaN HEMT device performance under high temperature operation without the use of heavy numerical solving process that requires complicated customized computer coding. © 2013 IEEE.||Source Title:||2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013||URI:||http://scholarbank.nus.edu.sg/handle/10635/83488||ISBN:||9781479904822||DOI:||10.1109/ECCE-Asia.2013.6579124|
|Appears in Collections:||Staff Publications|
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